Semiconductor device having a vertical active region and method of manufacture thereof
AssigneeAdvanced Micro Devices, Inc.
InventorsCharles E. May, Robert Dawson
Life of this patent
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Abstract
A semiconductor device and method of manufacture thereof is provided. According to one embodiment, a semiconductor device is formed by forming a trench within a substrate. An oxide layer is formed within the trench and portions of the oxide layer are removed to expose one or more portions of the substrate within the trench. A plurality of doped polysilicon pillars are formed within the trench. The doped polysilicon pillars include one or more active region pillars formed on the one or more exposed portions of the substrate.
Claims24
A process for forming a semiconductor device, comprising:
- forming a trench within a substrate;
- forming an oxide layer within the trench;
- removing a portion of the oxide layer to expose one or more portions of the substrate within the trench;
- and
- forming a plurality of doped polysilicon pillars within the trench, the plurality of doped polysilicon pillars including one or more active region pillars formed on the one or more exposed portions of the substrate.
A process for forming a semiconductor device, comprising:
- forming a silicon layer on an insulator;
- forming a trench within the silicon layer;
- forming an oxide layer within the trench;
- removing a portion of the oxide layer to expose one or more portions of the silicon layer within the trench;
- and
- forming a plurality of doped polysilicon pillars within the trench, the plurality of doped polysilicon pillars including one or more active region pillars formed on the one or more exposed portions of the silicon layer.
Dependencies are inferred from the claim text.