Method for manufacturing a semiconductor memory device having capacitive storage
AssigneeSamsung Electronics Co., Ltd.
InventorSang-in Lee
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Abstract
A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.
Claims14
A manufacturing method for a capacitor in a semiconductor memory device comprising the steps of:
- forming a first electrode having an amorphous first silicon carbide (SiC) layer on a surface of a semiconductor substrate, said first electrode formation step being performed by forming a first polysilicon layer doped with impurities and forming said amorphous first SiC layer on said first polysilicon layer;
- forming a dielectric film on said first silicon carbide layer;
- and
- forming a second electrode, having a second silicon carbide (SiC) layer, on said dielectric film, said second layer being disposed on the dielectric film.
Dependencies are inferred from the claim text.