Method of manufacturing a ferroelectric device
AssigneeMotorola, Inc.
InventorsWilliam J. Ooms, Jerald A. Hallmark, Daniel S. Marshall
Life of this patent
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Abstract
A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
Claims14
A method for manufacturing a ferroelectric device, comprising the steps of:
- providing a semiconductor material;
- forming a ferroelectric material over the semiconductor material;
- forming a layer of semiconductor material over the ferroelectric material;
- forming a gate structure having first and second edges over the layer of semiconductor material;
- and
- forming first and second contacts to the layer of semiconductor material, the first contact adjacent the first edge of the gate structure and the second contact adjacent the second edge of the gate structure.
A method of forming a ferroelectric semiconductor transistor in a multi-layer semiconductor substrate, comprising the steps of:
- providing a substrate;
- forming an epitaxially grown layer of ferroelectric material over the substrate;
- forming a layer of semiconductor material over the ferroelectric material, wherein the substrate, the ferroelectric material, and the layer of semiconductor material cooperate to form the multi-layer semiconductor substrate;
- forming a gate structure having first and second edges over the layer of semiconductor material;
- forming source and drain regions in the semiconductor material adjacent respective first and second edges of the gate structure;
- and
- forming first and second contacts to the respective source and drain regions.
Dependencies are inferred from the claim text.