LC element manufacturing method

An LC element manufacturing method comprising:

• providing a semiconductor substrate;
• forming a diffusion region in the semiconductor substrate;
• forming an insulation layer over the semiconductor substrate;
• forming a gate electrode into one of a spiral, a meander, an arc, a sinusoidal and a circular shape to produce a signal transmission line having a distributed inductance and a distributed capacitance relative to the semiconductor substrate for transmission of signals, the gate electrode being formed over the insulation layer, the gate electrode being formed over at least a portion of the diffusion region;
• and
• forming wires over the semiconductor substrate electrically connected to the signal transmission line gate electrode and the diffusion region.

An LC element manufacturing method comprising:

• providing a semiconductor substrate;
• forming a first diffusion region and a second diffusion region in the semiconductor substrate;
• forming an insulation layer over the semiconductor substrate;
• forming a gate electrode transmission line include the gate electrode, the gate into one of a spiral, a meander, an arc, a sinusoidal and a circular shape to produce a signal transmission line having a distributed inductance and a distributed capacitance relative to the semiconductor substrate for transmission of signals, the gate electrode having a length and a width being formed over the insulation layer, wherein the length is far greater than the width, the gate electrode being formed over at least a portion of the first and second diffusion regions;
• and
• forming wires over the semiconductor substrate electrically connected to the first and second diffusion regions.