Process for forming high-quality deposited film utilizing plasma CVD
AssigneeCanon Kabushiki Kaisha
InventorsSatoshi Takaki, Atsushi Yamagami, Nobuyuki Okamura
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Abstract
Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.
Claims21
A process for forming a deposited film containing at least one Group IVA element comprising introducing a stock gas under a reduced pressure into a reaction chamber provided with at least a cathode electrode inside thereof and applying a high-frequency power to said cathode electrode to form plasma of the stock gas, thereby forming a deposited film on a deposition-target substrate,
- wherein a frequency of the high-frequency power applied to said cathode electrode is set in the range of 50 MHz to 300 MHz and ions of the stock gas with energy of 40 or more eV are made to hit against said deposition-target substrate, thereby forming the deposited film thereon.
A process for forming a deposited film comprising introducing a stock gas under a reduced pressure into a reaction chamber provided with at least a cathode electrode inside thereof and applying a high-frequency power to said cathode electrode to form plasma of the stock gas, wherein a plurality of cylindrical substrates are arranged on a circumference with the cathode electrode set in said reaction chamber being located at the center to form a discharge space in a central portion thereof, the high-frequency power is supplied to said cathode electrode while supplying the stock gas for film formation into said reaction chamber, thereby generating the plasma between the plurality of cylindrical substrates and said cathode electrode, and the plurality of cylindrical substrates are rotated each around a cylinder axis thereof to form deposited films on the surfaces of the plurality of cylindrical substrates, and wherein the frequency of the high-frequency power applied to said cathode electrode is set in the range of 50 MHz to 300 MHz and ions of the stock gas with energy of 40 or more eV are made to hit against the plurality of cylindrical substrates, whereby the deposited films are formed thereon.
Dependencies are inferred from the claim text.