Masking methods for semiconductor materials
AssigneeMotorola, Inc.
InventorKumar Shiralagi
Life of this patent
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Abstract
A method of forming a mask including providing a fluid from a group including oxygen based, nitrogen based, or carbon based fluids, introducing a substrate of semiconductor material into the fluid, and growing a film with thickness in a range of 10-20 .ANG. on a surface by converting the fluid adjacent the surface into a reactive species. The reactive species is created by directing light having a wavelength at the absorption peak of the fluid so as to convert the fluid into the reactive species. The surface of the substrate reacts with the reactive species to form the film.
Claims11
A method of forming a mask comprising the steps of:
- providing a fluid from a group including nitrogen based, and carbon based fluids;
- introducing a substrate of semiconductor material having a surface into the fluid;
- and
- forming a film with thickness in a range of 10-20 .ANG. on the surface by converting the fluid adjacent the surface into a reactive species by directing light having a wavelength which will convert the fluid into the reactive species, whereby the surface of the substrate reacts with the reactive species to form the film.
A method of forming a mask for the fabrication of a semiconductor device comprising the steps of:
- providing a fluid from a group including oxygen based, nitrogen based, and carbon based fluids;
- introducing a substrate of semiconductor material having a surface into the fluid so that fluid is adjacent the surface of the substrate;
- positioning a photoresist-free mask adjacent the surface of the substrate so as to define a growth area and an unmasked portion on the surface of the substrate;
- and
- forming a semiconductor device fabrication masking film on the surface of the substrate by converting the fluid adjacent the unmasked portion of the surface of the substrate into a reactive species by directing light having a wavelength at the absorption peak of the fluid onto the unmasked portion of the surface of the substrate so as to convert the fluid adjacent the unmasked portion of the surface of the substrate into the reactive species, whereby the unmasked portion of the surface of the substrate reacts with the reactive species to form the semiconductor device fabrication masking film on the unmasked portion of the substrate;
- removing the photoresist-free mask to expose the growth area;
- and
- fabricating a semiconductor device on the substrate utilizing the semiconductor device fabrication masking film and the exposed growth area.
Dependencies are inferred from the claim text.