Plasma processing apparatus
AssigneeNEC Corporation
InventorHidenobu Miyamoto
Life of this patent
Estimating the term…
Abstract
A dielectric member is provided at the upper portion of a grounded vacuum reaction vessel. Other portion of the vacuum reaction vessel is grounded. A flow path is formed within the dielectric member. The flow path is covered with a conductive member and an insulation member. The conductive member is grounded at the same voltage as the vacuum reaction vessel. Also, a temperature measuring element is buried within the dielectric member. The temperature measured by the temperature measuring element is fed back so that the temperature of the hot insulation medium is controlled. Thus, the temperature of the dielectric member is maintained constant within a range of 60.degree. to 160.degree. C.
Claims17
A plasma processing apparatus comprising:
- a vacuum reaction vessel having a dielectric member at an upper portion thereof, a second portion of said dielectric member being electrically grounded;
- a high frequency coil provided outside of said vacuum reaction vessel at an upper surface of said dielectric member;
- a first high frequency power source supplying a high frequency current to said high frequency coil;
- a first tuning member connected between said high frequency coil and said first high frequency source;
- means for introducing a process gas into said vacuum reaction chamber;
- a lower electrode positioned at a lower part of said vacuum reaction vessel and mounting a work to be processed;
- a second high frequency power source applying a high frequency voltage to said lower electrode;
- a second tuning member connected between said lower electrode and said second high frequency power source;
- a hot fluid circulating device having a plurality of flow paths through which the hot fluid is circulated within the dielectric member and which is located outside of the vacuum reaction vessel;
- means for electrically holding at ground potential one of said hot fluid and said flow paths;
- and
- a temperature adjusting member for controlling a temperature of said hot fluid and said dielectric member.
A plasma processing apparatus, comprising:
- a vacuum reaction chamber having a top portion and a bottom portion;
- a lower electrode for holding a workpiece positioned at the bottom portion of said vacuum reaction chamber;
- a coil positioned on the top portion of said vacuum reaction chamber;
- a dielectric flow path, for circulating a hot conductive fluid, positioned at the top portion of said vacuum reaction chamber beneath said coil;
- and means for holding the hot conductive fluid to ground potential as to reduce capacitive coupling between said coil and a plasma produced in said vacuum reaction chamber.
Dependencies are inferred from the claim text.