Method of producing single crystal thin film
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsHitoshi Habuka, Masanori Mayusumi
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Abstract
A method of growing a single crystal thin film characterized by heating a silicon single crystal substrate placed in a reactor vessel, then while the temperature of the silicon single crystal substrate is 850.degree. C. or below, introducing a mixed gas composed of hydrogen fluoride gas and hydrogen gas into the reactor vessel for removing a native oxide film on a main surface of the silicon single crystal substrate in an ambient of hydrogen gas; and thereafter, growing a single crystal thin film by a vapor phase epitaxy on said main surface free from the native oxide film at a temperature of 1,000.degree. C. or below. With this method, both evaporation of a dopant caused by outdiffusion and autodoping can be suppressed with a substantial reduction of the processing time.
Claims6
A method of growing a single crystal thin film comprising the steps of:
- (a) starting to heat a silicon single crystal substrate placed in a reactor vessel at a temperature of 100.degree. C. or below;
- (b) then, when the single crystal substrate is at a temperature of 100.degree. C. or above, introducing a mixed gas consisting of hydrogen fluoride gas and hydrogen gas into the reactor vessel for removing a native oxide film on a main surface of the silicon single crystal substrate;
- (c) stopping the introduction of hydrogen fluoride gas when the temperature of the silicon single crystal substrate is 850.degree. C. or below during the step of heating up the single crystal substrate;
- and
- (d) thereafter, growing a single crystal thin film by a vapor phase epitaxy on said main surface free from the native oxide film at a temperature of 1,000.degree. C. or below.
Dependencies are inferred from the claim text.