Method for forming crystal and crystal article obtained by said method
AssigneeCanon Kabushiki Kaisha
InventorsJinsho Matsuyama, Yutaka Hirai, Masao Ueki, Akira Sakai
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Abstract
A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS), thereby growing a single crystal from said single nucleus.
Claims25
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces, said nucleation surfaces constituting a first amorphous material which are exposed from a non-nucleation surface, said non-nucleation surface being a second amorphous material;
- said single-crystals corresponding in shape to each of said exposed nucleation surfaces and overgrown on said non-nucleation surface, which method comprises:
- (a) providing a substrate having said nucleation surfaces comprising said first amorphous material;
- (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate;
- (c) partly removing said layer to expose said nucleation surfaces;
- said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface;
- the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a metallic material exposed from a non-nucleation surface of a second material, said single-crystals corresponding in shape to said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises:
- (a) providing a substrate having said nucleation surfaces comprising said metallic material;
- (b) forming a layer having said non-nucleation surface comprising said second material on said nucleation surfaces of said substrate;
- (c) partly removing said layer to expose said nucleation surfaces;
- said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said non-nucleation surface;
- the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus;
- wherein said single-crystal is comprised of a material other than the material constituting said exposed nucleation surface.
A method for producing a crystal article having a crystal portion constituted of a plurality of single-crystals formed on a substrate having a plurality of nucleation surfaces of a first amorphous material exposed from a non-nucleation surface of a second amorphous material, said single-crystals corresponding in shape to each of said nucleation surfaces and overgrown on said non-nucleation surface, which method comprises:
- (a) providing a substrate having said nucleation surfaces comprising said first amorphous material and formed by ion implantation;
- (b) forming a layer having said non-nucleation surface comprising said second amorphous material on said nucleation surfaces of said substrate;
- (c) partly removing said layer to expose said nucleation surfaces;
- said exposed nucleation surfaces being arranged in a plural number as regularly sectionalized within said surface;
- the nucleation density of the material constituting said single-crystal on said exposed nucleation surface being sufficiently larger than the nucleation density of the material constituting said single-crystal on said non-nucleation surface so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- each of said exposed nucleation surfaces having an area of 10 mm or less in diameter so as to form a nucleus from which said single-crystal is grown only on said exposed nucleation surface;
- and
- (d) applying vapor deposition to form said nucleus and to grow said single-crystal from said nucleus.
Dependencies are inferred from the claim text.