Process and apparatus for fabricating a semiconductor wafer
AssigneeKomatsu Electronic Metals Co., Ltd.
InventorNaoki Yamada
Life of this patent
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Abstract
A process for fabricating a semiconductor wafer and an apparatus for chamfering a semiconductor ingot are provided to precisely perform the chamfering together and reduce significantly the cutting and chamfering time. The semiconductor ingot 2 is rotated with respect to the central axis C while the circumferential surface 21 of the rotating ingot 2 is brought in contact with the uneven surface 11 of a grindstone 1. The circumferential surface of the ingot is chamfered in accordance with the uneven surface 11 of the grindstone 1. A wiresaw is used to cut the semiconductor ingot 2 to obtain the sliced wafers 3.
Claims4
A process for fabricating a semiconductor wafer, comprising the steps of:
- processing a circumferential surface of a semiconductor ingot prior to cutting to obtain a plurality of sliced wafers, to form a planned chamfered shape at every interval for which the sliced wafers are to be cut;
- and
- cutting the semiconductor ingot into the sliced wafers.
The process for fabricating a semiconductor wafer, wherein the cutting is performed by using a wiresaw.
A processing apparatus for chamfering a semiconductor wafer, comprising
- a rotating means for rotating a semiconductor ingot with respect to a central axis thereof;
- and
- a grinding means having an uneven circumferential surface corresponding to a chamfered shape of each sliced wafer at every interval for which the sliced wafers are to be cut.
Dependencies are inferred from the claim text.