Anti-noise and auto-stand-by memory architecture
AssigneeSGS-Thomson Microelectronics S.A.
InventorsLuigi Pascucci, Marco Olivo
Life of this patent
Estimating the term…
Loading patent…
AssigneeSGS-Thomson Microelectronics S.A.
InventorsLuigi Pascucci, Marco Olivo
Estimating the term…
Spurious memory readings which may be caused by noise induced by transitions in the output buffers of a fast parallel memory device are prevented by permitting output latches to change state in function of newly extracted data signals by means of an enabling pulse having a preestablished duration and which is generated only after a change of memory address signals has occurred and the new configuration of memory address signals has lasted for a time which is not shorter than the time of propagation of signals through the memory chain. The enabling pulse is generated by employing a detector of transitions occurring in the input circuitry of the memory, a dummy memory chain, a one-shot pulse generator and a resetting pulse generator. The anti-noise network may be exploited also for implementing an auto-stand-by condition at the end of each read cycle, which reduces power consumption and increases speed by simplifying the sensing process.
A method for preventing spurious memory readings from a memory device caused by noise induced by transitions in an output buffer driven by a circuit capable of storing data extracted from a memory matrix of the memory device, said data storing circuit being in a disabled state during a propagation delay, in the memory device the method comprising the steps of:
A method of preventing erroneous memory readings from a memory device caused by noise induced by transitions in an output buffer driven by an output storage circuit, said storage circuit being in a disabled state during a propagation delay, in the memory device, the method comprising the steps of:
Dependencies are inferred from the claim text.