Insulated-gate controlled semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsNaoki Kumagai, Katsunori Ueno
Life of this patent
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Abstract
An insulated-gate controlled semiconductor device includes a main circuit that is controlled by an insulated gate having a gate resistor, an overload detector having the insulated gate for use in common with the main circuit, the overload detector being of the same construction as that of the main circuit, a current detector for detecting current passing through the overload detector, and a field effect transistor having a gate which responds to the voltage drop across the current detector. The main circuit is protected by lowering the voltage applied to the insulated gate through the gate resistor and through the low on-resistance of the field effect transistor while the field effect transistor is held on.
Claims11
A short protective circuit comprising:
- a control terminal;
- a first switching element having a control electrode, a first electrode and a second electrode, said first switching element being driven by a signal applied from the control terminal to the control electrode;
- a second switching element for current detection having a control electrode, a first electrode and a second electrode, the control electrode and the first electrode of the second switching element being respectively connected to the control electrode and the first electrode of the first switching element, the second electrode of the second switching element being connected to the second electrode of the first switching element through a current detecting resistor;
- a branch circuit having a discharge switching element, said branch circuit connected to a circuit connection between the control terminal and the control electrode of the first switching element;
- means for reducing a drive signal of the first switching element by activating the discharge switching element when an excessive current flows through a current detecting resistor, said discharge switching element maintaining the reduced drive signal when the excessive current flowing through the first switching element is suppressed as the drive signal decreases;
- and
- means for deactivating the discharge switching element when a signal applied to the control terminal becomes zero or opposite in polarity from the drive signal after the drive signal is reduced.
A short protective circuit comprising:
- a control terminal;
- a first switching element having a control electrode, a first electrode and a second electrode, said first switching element being driven by a signal applied from the control terminal to the control electrode;
- a second switching element for current detection and having a control electrode, a first electrode and a second electrode, the control electrode and the first electrode of the second switching element being respectively connected to the control electrode and the first electrode of the first switching element, the second electrode of the second switching element being connected to the second electrode of the first switching element through a current detecting resistor;
- a branch circuit having a discharge switching element, said branch circuit connected to a circuit connection between the control terminal and the control electrode of the first switching element;
- means for reducing a drive signal of the first switching element by activating the discharge switching element when an excessive current flows through a current detecting resistor, said discharge switching element maintaining the reduced drive signal when the excessive current flowing through the first switching element is suppressed as the drive signal decreases;
- and
- means for deactivating the discharge switching element when a signal applied to the control terminal becomes zero or opposite in polarity from the drive signal after the drive signal is reduced,
- wherein the discharge switching element is a MOSFET having a gate electrode, and
- wherein said deactivating means includes a first diode connected between the gate of the MOSFET and the control electrode of the first switching element.
Dependencies are inferred from the claim text.