Field emitter device, and veil process for THR fabrication thereof

A field emitter device precursor article for use in forming a field emitter device, said precursor article comprising:

• a substrate;
• an insulator material on said substrate, said insulator material defining a cavity having a base capable of receiving a field emitter element formed therein, said cavity having an upper opening spaced from said base, said upper opening being adapted for discharge of electrons from the field emitter element through said upper opening;
• a gate conductor layer formed on said insulator material, said insulator material circumscribing and extending over a portion of said opening and a field emitter element formed on said base and, said gate conductor layer defining a circumscribing peripheral edge in spaced relationship to said field emitter element, said circumscribing peripheral edge in turn defining an opening in said gate electrode layer which is aligned with said upper opening of said cavity;
• a temporary protective layer formed over said gate conductor layer, said protective layer including a liftoff layer formed on said gate conductor layer that extends over said circumscribing peripheral edge of said gate conductor layer, wherein said temporary protective layer restricts deposition of field emitter element forming material on said gate conductor layer circumscribing peripheral edge during formation of said field emitter element on said base;
• a field emitter element formed on said base within said cavity by depositing field emitter element forming material on said base, and
• an overlayer of excess deposited field emitter element forming material on said temporary protective layer, wherein said overlayer at least partially occludes said upper opening of said cavity.