Adhesive composition, semiconductor device using the composition and method for producing a semiconductor device using the composition

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising a reactive thermoplastic resin,
• a flexibilizer comprising reactive silicone, and
• a solvent for dissolving said main component and said flexibilizer,
• wherein said main component is reacted with said flexibilizer before being applied to an adherend and said adhesive composition is dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising a reactive thermoplastic resin,
• a cross-linking agent comprising epoxy resin having at least two epoxy groups,
• an additive comprising polyallylphenol, and
• a solvent for dissolving said main component, said cross-linking agent and said additive, wherein said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising ethylene-propylene terpolymer having one of dicyclopentadiene and ethylidene norbornene as a third component,
• a cross-linking agent comprising polyallylphenol, and
• a solvent for dissolving said main component and said cross-linking agent,
• wherein said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising reactive thermoplastic resin,
• a cross-linking agent for cross-linking said main component,
• a fire retardant comprising silicone resin, and
• a solvent for dissolving said main component and said cross-linking agent and homogeneously dispersing said fire retardant,
• wherein said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component including thermoplastic resin having carboxyl groups,
• epoxy resin having at least two epoxy groups, and a solvent,
• wherein an organophosphorus compound covered with thermoplastic resin is included as a catalyst.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component including thermoplastic resin having carboxyl groups,
• epoxy resin having at least two epoxy groups, and a solvent,
• wherein a quaternary salt of an organophosphorus compound having at least one aryl group is included as a catalyst.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component including thermoplastic resin having carboxyl groups,
• epoxy resin having at least two epoxy groups, and a solvent,
• wherein an organophosphorus compound having a melting point in the range of about 100.degree. C. to 200.degree. C. is included as a catalyst.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising reactive thermoplastic resin,
• a cross-linking agent for cross-linking said main component,
• a tackifier for varying the viscosity, and
• a solvent for dissolving said main component, said cross-linking agent and said tackifier,
• wherein the amount of said tackifier is about five to 400 parts by weight with respect to 100 parts by weight of said main component, and
• said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising reactive thermoplastic resin,
• a cross-linking agent comprising a biphenyl type epoxy resin, and
• a solvent for dissolving said main component and said cross-linking agent,
• wherein the amount of said cross-linking agent is about five to 400 parts by weight with respect to 100 parts by weight of said main component, and
• said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising reactive thermoplastic resin,
• a cross-linking agent comprising epoxidated polybutadiene rubber, and
• a solvent for dissolving said main component and said cross-linking agent,
• wherein the amount of said cross-linking agent is about five to 400 parts by weight with respect to 100 parts by weight of said main component, and
• said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.

A semiconductor device comprising:

• a substrate,
• a semiconductor element mounted on said substrate, and
• a wiring layer for connecting said semiconductor element to an outer lead portion,
• wherein an adhesive layer is provided one of between said substrate and said semiconductor element, between said substrate and said wiring layer, between said substrate and said semiconductor element and between said substrate and said wiring layer, and said adhesive layer is comprised of an adhesive composition comprising:
• a main component comprising a reactive thermoplastic resin,
• a cross-linking agent,
• a tackifier,
• a solvent for dissolving said main component, said cross-linking agent and said tackifier, and
• a filler
• wherein the shape of said filler is substantially spherical and said adhesive composition is applied to an adherend and dried in order to evaporate said solvent before a thermocompression process.