Photosensitive structure hardened to hard electromagnetic radiation and its application to video cameras

Photosensitive device designed to capture light and deliver an electrical signal representative of the captured light in a video camera, said device presenting resistance to hard electromagnetic radiation, including at least one photosensitive element in hydrogenated amorphous silicon comprising at least one junction presenting a depleted zone, said junction comprising a player in hydrogenated amorphous silicon, said player having a thickness capable of withstanding said hard electromagnetic radiation, and means for collecting electrical charges induced by photoelectric effect in said photosensitive element capturing light and for delivering said electrical signal, wherein means are provided for the reverse polarization of the photosensitive element, wherein the photosensitive element is hydrogenated amorphous silicon constituting a p-i-n type bipolar junction wherein the p-i-n type bipolar junction presenting the succession of layers p, i and n to the light to be captured has a thickness of between 0.5 and 2 .mu.m, and in which the layer p has a thickness greater than about 10% of the thickness of the photosensitive element.