Body contact structure for semiconductor device

A contact structure, comprising:

• a substrate extending in a first direction;
• a conductive source region formed in the substrate;
• a plurality of conductive body contact diffusion regions formed in the substrate along the first direction separated by the conductive source region, wherein end portions of adjacent diffusion regions are aligned in a second direction, and the second direction is substantially perpendicular to the first direction;
• and
• a plurality of wiring contacts, wherein each wiring contact couples two adjacent diffusion regions, and a ratio of contacting surface of the source region with the wiring contacts and the diffusion regions with the wiring contacts is 1-to-1.

A contact structure, comprising:

• a substrate extending in a first direction;
• a conductive source region formed in the substrate;
• a plurality of conductive body contact diffusion regions formed in the substrate along the first direction separated by the conductive source region, wherein end portions of adjacent diffusion regions intersect a line extending along a second direction, and the second direction is substantially perpendicular to the first direction;
• and
• a plurality of wiring contacts, wherein each wiring contact couples two adjacent diffusion regions, and a ratio of contacting surface of the source region with the wiring contacts and the diffusion regions with the wiring contacts is 1-to-1.