Charge-coupled device image sensor

A charge-coupled device image sensor comprising:

• a low concentration substrate of a first conductivity type;
• a low concentration well of a second conductivity type on the substrate;
• a light-detection region of the first conductivity type generating signal charges in the well;
• a buried channel region of the first conductivity type spaced apart from the light-detection region in the well;
• a first high concentration impurity region of the second conductivity type on the light-detection region reducing dark current charges;
• a first surface channel region of the second conductivity type on the buried channel region;
• a second high concentration impurity region of the second conductivity type in the well;
• a third high concentration impurity region of the first conductivity type on the second high concentration impurity region, the third high concentration impurity region sweeping the dark current charges;
• and
• a second surface channel region of the second conductivity type to a predetermined depth in the well between the third concentration impurity region and the first surface channel region.

A semiconductor device comprising:

• a semiconductor substrate of a first conductivity type;
• a buried channel region of a second conductivity type in the substrate to a predetermined depth;
• a first high concentration impurity region of the second conductivity type spaced apart from the buried channel region;
• a first surface channel region of the first conductivity type on the buried channel region;
• a second high concentration impurity region of the first conductivity type below the first high concentration impurity region;
• a second surface channel region of the first conductivity type between the first high concentration impurity region and the first surface channel region;
• a third high concentration impurity region of the second conductivity type adjacent to the first surface channel region opposite the second surface channel region;
• a capacitor electrode above the first surface channel region and the second surface channel region;
• and
• a read-out gate above the first surface channel region and adjacent to the capacitor electrode.