High speed semiconductor phototransistor

An ultra-high speed semiconductor phototransistor comprising:

• a substrate;
• a conductive collector layer having a collector electrode and formed on said substrate;
• a conductive barrier layer formed on said conductive collector layer, said collector barrier layer further comprising:
• a resonant tunneling double barrier structure for passing through the double-barrier quantum-well confined states only electrons, which have been excited by a predetermined frequency in the emitter barrier region;
• blocking barrier layer positioned beneath said resonant tunneling double-barrier structure for reducing a dark current passed through said resonant tunneling double-barrier structure;
• and
• a first buffer layer for absorbing electric potential change, said first buffer layer positioned beneath said blocking barrier layer for reducing an electric potential change in said resonant tunneling double-barrier structure;
• a conductive base layer having a base electrode and formed on said collector electric potential barrier layer;
• an emitter barrier layer formed on said conductive base layer for injecting hot-electrons into said conductive base layer, said emitter barrier layer further comprising:
• various sizes of quantum dot array combination structures for absorbing an infrared ray;
• a blocking barrier layer positioned beneath said quantum dot array combination structures for reducing a dark current passed through said quantum dot array combination structure;
• a second buffer layer positioned beneath said blocking barrier layer for absorbing electric potential change for reducing an electric potential change due to a voltage drop when external voltage is applied in said quantum dot array combination structure;
• and
• a conductive emitter layer having an emitter electrode and formed on said emitter barrier layer.

An ultra-high speed semiconductor phototransistor comprising:

• a substrate;
• a conductive collector layer having a collector electrode and formed on said substrate;
• a collector barrier layer formed on said conductive collector layer, said collector barrier layer further comprising:
• a resonant tunneling double-barrier structure for passing through the double-barrier quantum-well confined states only electrons, which were excited by a predetermined frequency in the emitter region;
• a blocking barrier layer positioned beneath said resonant tunneling double-barrier structure for reducing a dark current passed through said resonant tunneling double-barrier structure;
• a first buffer layer for absorbing electric potential change, said first buffer layer positioned beneath said blocking barrier layer for absorbing an electric potential change inside said resonant tunneling double-barrier structure;
• a conductive base layer having a base electrode and formed on said collector electric potential barrier layer;
• an emitter barrier layer formed on said conductive base layer for injecting hot-electrons onto said conductive base layer;
• and
• a conductive emitter layer having an emitter electrode and formed on said emitter barrier layer, said emitter barrier layer further comprising:
• a first spacer layer positioned between the emitter layer and the emitter barrier structure;
• various sizes of quantum dot array combination structures positioned beneath said first spacer layer for absorbing an infrared photon;
• a blocking barrier layer positioned beneath said quantum dot array combination structures for reducing a dark current passed through said quantum dot array combination structure;
• and
• a second buffer layer positioned beneath said blocking barrier layer for absorbing and electric potential change due to a voltage drop when external voltage is applied inside said quantum dot array combination structure.

An ultra-high speed semiconductor phototransistor comprising:

• a substrate;
• a conductive collector layer having a collector electrode and formed on said substrate;
• a collector barrier layer formed on said conductive collector layer;
• a conductive base layer having a base electrode and formed on said collector electric potential barrier layer;
• an emitter barrier layer formed on said conductive base layer for injecting hot-electrons into said conducive base layer;
• and
• a conductive emitter layer having an emitter electrode and formed on said emitter barrier layer, said emitter barrier layer further comprising:
• a spacer layer between said conductive emitter layer and said emitter barrier structure;
• various sizes of quantum dot array combination structures positioned beneath said spacer layer for absorbing infrared photons;
• a blocking barrier layer positioned beneath said quantum dot array combination structures for reducing a dark current passed through said quantum dot array combination structure;
• and
• a second buffer layer positioned beneath said blocking barrier layer for absorbing an electric potential change due to a voltage drop when external voltage is applied inside said quantum dot array combination structure.