Method for forming a wiring layer a semiconductor device

A method for forming a wiring layer of a semiconductor device, comprising the steps of:

• forming an insulating layer on a substrate;
• forming a contact hole in said insulating layer, to thereby expose a portion of said substrate;
• forming a diffusion barrier layer on said insulating layer and said exposed portion of said substrate;
• annealing said diffusion barrier layer under a nitrogen atmosphere, while introducing oxygen into said nitrogen atmosphere, to thereby form an oxide layer on said diffusion barrier layer;
• hydrogen-treating the resultant structure produced by the preceding steps in a hydrogen plasma, to thereby form a hydrogen-treated surface layer on said oxide layer;
• and
• forming a conductive layer on said hydrogen-treated surface layer,
• wherein the atoms in said hydrogen treated surface layer react with said conductive layer, to thereby enhance the filling of said contact hole and the adhesion property of said hydrogen-treated surface layer to said conductive layer.