Modified clean recipe to suppress formation of BPSG bubble

A method of forming a BPSG dielectric layer on a wafer without delamination in the fabrication of an integrated circuit device wherein a BPSG deposition chamber is used comprising:

• providing semiconductor device structures in and on a semiconductor substrate;
• cleaning said BPSG deposition chamber to remove residual fluorine-containing gas wherein said cleaning comprises flowing only SiH.sub.4 plasma and N.sub.2 O plasma into said chamber;
• thereafter depositing a layer of BPSG over said semiconductor device structures wherein said BPSG layer is deposited while said wafer is within said BPSG deposition chamber;
• and
• flowing said BPSG layer wherein no fluorine gas bubble is formed within said BPSG layer to complete the formation of said BPSG dielectric layer on said wafer without delamination in the fabrication of said integrated circuit device.

A method of forming a BPSG dielectric layer on a wafer without delamination in the fabrication of an integrated circuit device wherein a BPSG deposition chamber is used comprising:

• providing semiconductor device structures in and on a semiconductor substrate;
• initially cleaning said deposition chamber using a fluorine-containing gas;
• thereafter cleaning said BPSG deposition chamber to remove residual fluorine-containing gas wherein said cleaning comprises the steps of:
• pumping said fluorine-containing gas out of said deposition chamber wherein residual fluorine-containing gas remains within said deposition chamber;
• thereafter flowing only a SiH.sub.4 plasma and a N.sub.2 O into said deposition chamber wherein said plasma consumes all of said residual fluorine-containing gas;
• and
• purging said plasma from said deposition chamber to complete said cleaning of said chamber;
• thereafter depositing a layer of BPSG over said semiconductor device structures wherein said BPSG layer is deposited while said wafer is within said BPSG deposition chamber;
• and
• flowing said BPSG layer wherein no fluorine gas bubble is formed within said BPSG layer to complete the formation of said BPSG dielectric layer on said wafer without delamination in the fabrication of said integrated circuit device.