Methods of fabricating ferroelectric capacitors
AssigneeSamsung Electronics Co., Ltd.
InventorsSuk-ho Joo, Jong Moon
Life of this patent
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Abstract
Methods of producing ferroelectric capacitors where the electrodes are formed in a contact hole. These methods include the steps of forming an insulating layer on an integrated circuit substrate. A contact hole is then formed through the insulating layer layer to expose a region of the integrated circuit substrate and to define a storage node pattern. A layer of oxidation-resistant conductive material is formed in the contact hole and the insulating layer removed to define a first storage electrode by exposing the layer of oxidation-resistant conductive material. A ferroelectric layer is then formed on the first storage electrode and a second storage electrode is formed on the ferroelectric layer opposite the first storage electrode.
Claims29
A method of fabricating a ferroelectric capacitor, the method comprising the steps of:
- forming a nitride layer on an integrated circuit substrate;
- forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern;
- forming a layer of oxidation-resistant conductive material in the contact hole;
- removing the insulating layer to define a first storage electrode by exposing the layer of oxidation-resistant conductive material;
- forming a ferroelectric layer on the first storage electrode;
- and
- forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
A method of fabricating a ferroelectric capacitor, the method comprising the steps of:
- forming a nitride layer on an integrated circuit substrate;
- forming an insulating layer on the nitride layer opposite the integrated circuit substrate, the insulating layer including a contact hole through the insulating layer and the nitride layer which exposes a region of the integrated circuit substrate and which defines a storage node pattern;
- forming a layer of oxidation-resistant conductive material in the contact hole and on the insulating layer opposite the integrated circuit substrate;
- removing the layer of oxidation-resistant conductive material from the insulating layer opposite the integrated circuit substrate, while allowing the layer of oxidation-resistant conductive material to remain in the contact hole to define a first storage electrode;
- forming a ferroelectric layer on the first storage electrode;
- and
- forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
A method of fabricating a ferroelectric capacitor, the method comprising the steps of:
- forming an insulating layer on an integrated circuit substrate, the insulating layer including a contact hole which exposes a region of the integrated circuit substrate and which defines a storage node pattern;
- forming a layer of oxidation-resistant conductive material in the contact hole;
- forming an insulating mask on the layer of oxidation-resistant conductive material in the contact hole;
- removing the insulating layer and the insulating mask to define a first storage electrode by exposing the layer of oxidation-resistant conductive material;
- forming a ferroelectric layer on the first storage electrode;
- and
- forming a second storage electrode on the ferroelectric layer opposite the first storage electrode.
Dependencies are inferred from the claim text.