Two-step process for cleaning a substrate processing chamber
AssigneeApplied Materials, Inc.
InventorAshish V. Shrotriya
Life of this patent
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Abstract
A method for removing particles from an interior surface of a processing chamber using a two-step cleaning process. The method includes introducing a first cleaning process gas into the processing chamber, applying energy to that first cleaning process gas to remove particles from the processing chamber's interior surface, and introducing a second cleaning process gas into the processing chamber to remove a cleaning residue formed by a reaction between the first cleaning process gas and the processing chamber's interior surface. Removing or gettering the cleaning residue from the chamber wall improves the quality of the wafers formed in the process.
Claims22
A process for removing a deposition residue from an interior of a processing chamber, while minimizing a cleaning residue resulting from said process, said process comprising the steps of:
- flowing a first cleaning process gas into the processing chamber, said first cleaning process gas comprising ozone and a fluorine-containing compound;
- forming a plasma from said first cleaning process gas;
- maintaining said plasma for a first time period;
- flowing a second cleaning process gas into the processing chamber, wherein said second cleaning process gas consists of a compound selected from the group of compounds consisting of perfluorocarbons, fluorine, nitrogen, and combinations of fluorine and nitrogen;
- and
- maintaining said plasma for a second time period.
A process for cleaning interior surfaces of a processing chamber, said process comprising the steps of:
- flowing a first cleaning process gas into the processing chamber, said first cleaning process gas comprising ozone and C.sub.2 F.sub.6 ;
- removing a deposition residue from the interior surfaces of the processing chamber by generating a plasma from said cleaning process gas, said plasma formed at a first RF power density of between about 1.38 W/cm.sup.2 and 3.95 W/cm.sup.2 ;
- and
- removing a cleaning residue from the interior surfaces of the processing chamber by maintaining said plasma while reducing said plasma to a second RF power density of between about 0.79 W/cm.sup.2 and 1.19 W/cm.sup.2.
A process for removing a deposition residue from an interior of a processing chamber, while minimizing a cleaning residue resulting from said process, said process comprising the steps of:
- flowing a first cleaning process gas into the processing chamber, said first cleaning process gas comprising ozone and a fluorine-containing compound;
- forming a plasma from said first cleaning process gas;
- maintaining said plasma for a first time period, wherein the cleaning residue is formed by a reaction between said first cleaning process gas and the interior of the processing chamber during said first time period;
- flowing a second cleaning process gas into the processing chamber, wherein said second cleaning process gas consists of a compound selected from the group of compounds consisting of fluorine, nitrogen, combinations of carbon and fluorine, and combinations of nitrogen and fluorine;
- and
- maintaining said plasma for a second time period.
A process for cleaning interior surfaces of a processing chamber, said process comprising the steps of:
- flowing a cleaning process gas into the processing chamber, said cleaning process gas comprising a fluorine-containing compound;
- forming a plasma from said cleaning process gas;
- maintaining said plasma for a first period of time, wherein said plasma is maintained at a first RF power density of between about 1.38 W/cm.sup.2 and 3.95 W/cm.sup.2 during said first period of time;
- and
- maintaining said plasma for a second period of time, wherein said plasma is maintained at a second RF power density of between about 0.79 W/cm.sup.2 and 1.19 W/cm.sup.2 during said second period of time.
Dependencies are inferred from the claim text.