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AssigneeDaimler-Benz Aktiengesellschaft
InventorsReinhard Zachai, Tim Gutheit, Kenneth Goodson
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The invention relates to a composite structure including a semiconductor layer arranged on a diamond layer and/or a diamond-like layer, for subsequent processing to produce electronic components and/or groups of components and to a process for producing such a composite structure. In order to improve the quality of the subsequent components, the diamond layer is deposited underneath the component source zones from which the components are subsequently produced, and the diamond or diamond-like layer is provided at the margins of the component source zones and/or outside of the component source zones with edges where the thickness of the layer changes abruptly such that the edges have an edge height amounting to at least 1O%, preferably at least 50%, of the layer thickness of the diamond layer. Imperfections such as dislocations or other discontinuities in the semiconductor layer tend to collect at these edges outside of the component source zones, thereby decreasing the density of discontinuities in the component source zones and improving the quality of electronic components produced of material from the component source zones.
A composite structure comprising a semiconductor layer arranged on a layer of diamond or diamond-like material, the layer of diamond or diamond-like material being disposed on an intermediate layer, the intermediate layer being disposed on a growth substrate, said composite structure defining at least one component source zone for subsequent processing into at least one electronic component, wherein said layer of diamond or diamond-like material is formed with at least one edge at which said layer of diamond or diamond-like material changes abruptly in thickness by at least 10%, wherein said at least one edge surrounds at least part of said at least one component source zone, and wherein said intermediate layer has lattice constants that vary, and said intermediate layer is either formed by a plurality of crystalline layers or formed of an alloy whose composition varies, or both.
A process for producing a composite structure comprising a semiconductor layer arranged on a layer of diamond or diamond-like material, said process comprising the steps of:
Dependencies are inferred from the claim text.