Quasi type II semiconductor quantum well device
AssigneeFujitsu Limited
InventorRichard Sahara
Life of this patent
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Abstract
A semiconductor device having a quantum well structure, the quantum well structure having: a first quantum well layer for forming a quantum well for electrons, the first quantum well layer having a first band structure; a second quantum well layer for forming a quantum well for holes, the second quantum well layer having a second band structure different from the first band structure; and an intermediate layer interposed between the first and second quantum well layers having a third band structure different from the first and second band structures, wherein the first quantum well layer forms a barrier to holes, and the second quantum well layer forms a barrier to electrons. Semiconductor devices having quantum well structures different from conventional type I and II quantum well structures are provided.
Claims7
A semiconductor device having a quantum well structure, the quantum well structure comprising:
- a first quantum well layer for forming a quantum well for electrons, said first quantum well layer having a first band structure;
- a second quantum well layer for forming a quantum well for holes, said second quantum well layer having a second band structure different from the first band structure;
- and
- an intermediate layer interposed between said first and second quantum well layers having a third band structure different from the first and second band structures,
- wherein said first quantum well layer forms a potential barrier to holes, said second quantum well layer forms a potential barrier to electrons, and said third band structure forms a quantum well for electrons and holes.
Dependencies are inferred from the claim text.