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US 5,840,616 AGranted
Method for preparing semiconductor member
AssigneeCanon Kabushiki Kaisha
InventorsKiyofumi Sakaguchi, Takao Yonehara
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Abstract
A method for preparing a semiconductor member comprises process of making a porous Si substrate and then forming a non-porous Si monocrystalline layer on the porous Si substrate; primary bonding process of bonding the porous Si substrate and an insulating substrate via the non-porous Si monocrystalline layer; etching process of etching the porous Si to remove the porous Si by chemical etching after the primary bonding process; and secondary bonding process of strengthening the primary bonding after the etching process.
Claims24
A method for producing a semiconductor member comprising the steps of:
- forming a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor thin film layer;
- bonding, at a first temperature, said first substrate to an insulating second substrate having a thermal expansion coefficient different from that of said first substrate, to provide a first multi-layer structure wherein said non-porous monocrystalline semiconductor thin film layer is arranged at an inner side thereof;
- removing said porous monocrystalline semiconductor layer from said first multi-layer structure to form a second multi-layer structure;
- and
- thermally processing by heating said second multi-layer structure at a second temperature, higher than the first temperature, to strengthen the bonding between said second substrate and said non-porous monocrystalline semiconductor thin film layer.
2 more elements
Dependencies are inferred from the claim text.