Electronic charge store mechanism

An electron beam addressed storage target comprising:

• target means comprising:
• electron collector means,
• a substrate,
• a plurality of pixel elements arranged into a plurality of rows and columns,
• each said pixel element comprising:
• conductor means overlapping said substrate to form a beam landing area located on said target means,
• electron source means for simultaneously bombarding said beam landing areas of said pixel elements in one or more of said rows during a first interval with a plurality of electrons emitted from said source means and simultaneously bombarding said beam landing areas of said pixel elements in each said row during a second interval with a second plurality of electrons emitted from said source means,
• control means to apply during said first interval a respective potential difference between said electron collector means and said conductor means of said pixel elements in the one or more of said rows thereby enabling a second respective potential difference to be established between said beam landing areas and said conductor means of the pixel elements dependent on said respective potential difference.

An electron beam addressed storage target comprising:

• target means comprising:
• electron collector means,
• a substrate,
• a plurality of pixel elements arranged into a plurality of rows and columns,
• each said pixel element comprising:
• conductor means overlapping said substrate to form a beam landing area located on said target means,
• electron source means comprising:
• base electrode means,
• a plurality of non overlapping row electrons means overlapping said base electrode means,
• electron emitting means operatively associated with each said row electrode means and said base electrode means for emitting a plurality of electron dependent upon a potential difference applied between said row electrode means and said base electrode means,
• said plurality of electrons emitted from each said emitting means simultaneously bombarding said beam landing areas of said pixel elements in a respective row of said pixel elements,
• control means for synchronizing application of said potential difference between one or more of said row electrode means and said base electrode means during a first interval with application of a second respective potential difference applied between said collector means and said conductor means of each said pixel element in the respective rows of said pixel elements corresponding to the emitting means emitting said plurality of electrons thereby enabling said pixel elements in said respective row(s) to establish a third respective potential difference between said beam landing area and said conductor means of each of said pixel elements dependent upon said second respective potential difference applied between said collector means and said conductor means of said pixel element.

An electron beam addressed storage target comprising:

• target means comprising:
• electron collector means,
• a substrate,
• a plurality of pixel elements arranged into a plurality of rows and columns,
• each said pixel element comprising:
• conductor means overlapping said substrate to form a beam landing area located on said target means,
• said conductor means of said pixel elements in each said column are electrically connected,
• electrode source means comprising:
• base electrode means,
• a plurality of non overlapping row electrons means overlapping said base electrode means,
• electron emitting means operatively associated with each said row electrode means and said base electrode means for emitting a plurality of electron dependent upon a potential difference applied between said row electrode means and said base electrode means,
• said plurality of electrons emitted from each said emitting means simultaneously bombarding said beam landing areas of said pixel elements in a respective row of said pixel elements,
• control means for synchronizing application of said potential difference between any of said row electrode means and said base electrode means during a first interval with application of a second respective potential difference applied between said collector means and the electrically connected conductor
• means of said pixel elements in each said column, thereby enabling each respective one of said pixel elements in any of said rows in which said beam landing areas of said pixel elements are simultaneously bombarded with said plurality of electrons to acquire an electronic charge dependent on said second respective potential difference applied between said collector means and said electrically connected conductor means of said respective one of said pixel elements.

An electron beam addressed storage target comprising:

• target means comprising:
• electron collector means,
• a substrate,
• a plurality of pixel elements arranged into a plurality of rows and columns,
• each said pixel element comprising:
• conductor means overlapping said substrate to form a beam landing area located on said target means,
• said conductor means of said pixel elements in each said column are electrically connected,
• electrode source means enabling said beam landing areas of said pixel elements in any of said rows to be simultaneously bombarded for a respective addressing interval with a plurality of electrons emitted from corresponding ones of a plurality of electron row sources,
• control means for applying a respective potential difference between said conductor means and said electrically connected conductor means of said pixel elements in each said column during said respective addressing interval,
• thereby enabling each respective one of said pixel elements in any of said rows in which said beam landing areas of said pixel elements are simultaneously bombarded with said plurality of electrons to acquire an electronic charge dependent on said respective potential difference applied between said collector means and said electrically connected conductor means of said respective one of said pixel elements.