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US 5,838,031 AGranted
Low noise-high linearity HEMT-HBT composite
AssigneeTRW Inc.
InventorsKevin Wesley Kobayashi, Dwight Christopher Streit, Aaron Kenji Oki, Donald Katsu Umemto
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Abstract
4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.
Claims33
A monolithic microwave integrated circuit (MMIC) composite device topology comprising:
- a high electron mobility transistor (HEMT) having gate, source and drain terminal;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, wherein said base terminal is electrically connected to said drain terminal, and wherein one or more of said collector, emitter, gate and source terminals are adapted to be selectively grounded to form four or less external terminals for connection to an external circuit.
A monolithic microwave integrated circuit (MMIC) topology comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals;
- and
- a heterojunction bipolar junction transistor (HBT) having base, collector and emitter terminals, wherein said emitter terminal of said HBT is electrically coupled to said drain terminal of said HEMT, and wherein two or less of said base, collector, gate, and source terminals are adapted to be selectively grounded to form four or less external terminals for connection to an external circuit.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said gate terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said base terminal of said HBT being electrically coupled to said drain terminal of said HEMT, said emitter terminal being electrically coupled to ground, wherein said source terminal of said HEMT and said base and collector terminals of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said gate terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said base terminal of said HBT being electrically coupled to said drain terminal of said HEMT, said collector terminal being electrically coupled to ground, wherein said source terminal of said HEMT and said emitter and collector terminals of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said source terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said base terminal of said HBT being electrically coupled to said drain terminal of said HEMT, said emitter terminal being electrically coupled to ground, wherein said gate terminal of said HEMT and said base and collector terminals of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said source terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said base terminal of said HBT being electrically coupled to said drain terminal of said HEMT, wherein said gate terminal of said HEMT and said collector and emitter terminals of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said source terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said emitter terminal of said HBT being electrically coupled to said drain terminal of said HEMT, said base terminal being electrically coupled to ground, wherein said gate and source terminals of said HEMT and said collector terminal of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC.
A monolithic microwave integrated circuit (MMIC) mixer comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said source terminal of said HEMT electrically coupled to ground;
- and
- a heterojunction bipolar transistor (HBT) having base, collector and emitter terminals, said emitter terminal of said HBT being electrically coupled to said drain terminal of said HEMT, wherein said gate terminal of said HEMT and said base and collector terminals of said HBT form three external terminals for connection to an external electrical circuit, thereby forming a three terminal MMIC mixer.
A monolithic microwave integrated circuit (MMIC) amplifier comprising:
- a high electron mobility transistor (HEMT) having gate, drain and source terminals, said gate terminal of said HEMT electrically coupled to ground;
- and
- a first heterojunction bipolar transistor (HBT) having first base, first collector and first emitter terminals, said first base terminal of said HBT being electrically coupled to said drain terminal of said HEMT, said source terminal being electrically coupled to a terminal forming an amplifier input for connection to an external circuit;
- a second HBT having base, collector and emitter terminals, said second HBT having second base, second collector and second emitter terminals, said second HBT being electrically coupled to said first HBT to form a Darlington pair;
- an output terminal electrical coupled to said first and said collector terminals for connection to an external electrical circuit;
- and
- a supply terminal electrically coupled to said first and second collector terminals for connection to an external supply voltage.
4 more elements
A monolithic microwave integrated circuit (MMIC) comprising:
- a high electron mobility transistor having gate, drain and source terminals, said source terminal being electrically coupled to ground, said gate terminal being electrically coupled to an input terminal for connection to an external circuit forming an amplifier input;
- a first heterojunction bipolar transistor (HBT) having first base, first collector and first emitter terminals, said first base terminal being electrically coupled to said drain terminal of said HEMT;
- a second HBT having second base, second collector and second emitter terminals, electrically coupled to said first HBT forming a Darlington pair;
- an output terminal, electrically coupled to said first and second collector terminals for connection to an external circuit;
- and
- a supply terminal electrically coupled to a supply terminal for connection to an external voltage supply.
3 more elements
Dependencies are inferred from the claim text.