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US 5,834,812 AGranted
Edge stripped BESOI wafer
AssigneeSiBond, L.L.C.
InventorsDavid I. Golland, Robert A. Craven, Ronald D. Bartram
Life of this patent
Estimating the term…
Abstract
A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.
Claims10
An SOI wafer comprising
- a handle wafer,
- an oxide layer on at least one surface of the handle wafer, and
- a device layer having an exposed surface, a bonded surface parallel to and opposite the exposed surface and having a periphery, and a mean thickness of between approximately 500 angstroms and approximately 50 microns with a thickness variance of less than approximately 10% of the mean thickness, the bonded surface being bonded generally in its entirety to the oxide layer,
- the device layer being radially contained within the periphery of the bonded surface.
1 more element
An SOI wafer comprising
- a handle wafer having a periphery,
- an oxide layer on at least one surface of the handle wafer, and
- a device layer including an exposed surface having a periphery, a bonded surface parallel to and opposite the exposed surface, the bonded surface being bonded generally in its entirety to the oxide layer and having a periphery lying radially outside the periphery of the exposed surface, a beveled edge extending between the Peripheries of the bonded and exposed surfaces, and a mean thickness of between approximately 500 angstroms and approximately 50 microns with a thickness variance of less than approximately 10% of the mean thickness,
- the periphery of the bonded surface of the device layer being radially contained within and radially spaced from the periphery of the handle wafer.
1 more element
An SOI wafer comprising
- a handle wafer having a periphery and a generally annular recess adjacent its periphery,
- an oxide layer on at least one surface of the handle wafer, and
- a device layer including an exposed surface, a bonded surface parallel to and opposite the exposed surface, the bonded surface being bonded generally in its entirety to the oxide layer and having a periphery, and a mean thickness of between approximately 500 angstroms and approximately 50 microns with a thickness variance of less than approximately 10% of the mean thickness,
- the periphery of the bonded surface of the device layer being radially contained within and radially spaced from the periphery of the handle wafer.
1 more element
Dependencies are inferred from the claim text.