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US 5,830,372 AGranted
Thermal sensor/actuator in semiconductor material
AssigneeSiemens Aktiengesellschaft
InventorChristofer Hierold
Life of this patent
Estimating the term…
Abstract
Semiconductor component with monolithically integrated electronic circuits and monolithically integrated sensor/actuator, whereby the sensor/actuator is manufactured with methods of surface micromachining in a sensor layer (3) of polysilicon that is structured, for example, with sensor webs (6), and these sensor webs (6) are thermally insulated from a silicon substrate (1) by a cavity (4) that is produced in a sacrificial layer (2) and is closed gas-tight toward the outside with a closure layer (5).
Claims6
A method for the manufacture of a thermal sensor/actuator semiconductor, comprising the steps of:
- in a first step, producing a structure of semiconductor material on a substrate of semiconductor material;
- in a second step, producing a structured layer from an electrically conductive material provided for a sensor/actuator such that the structured layer is interrupted in a layer plane of the structured layer by interspaces and is structured to form webs that have a comb-like structure of polysilicon tracks that proceed meander-like and that are arranged substantially parallel to one another;
- in a third step, producing a recess under the structured layer using said interspaces;
- in a fourth step, depositing a closure layer, that seals said interspaces such that a cavity is formed in said recess, at a gas pressure that is a function of the cavity to be produced;
- and
- in a fifth step, producing contacts for electrical connection of the sensor/actuator.
3 more elements
Dependencies are inferred from the claim text.