Method and apparatus for reflowing and annealing borophosphosilicate glass
AssigneeUnited Microelectronics Corp.
InventorsChen-Chiu Hsue, Edward Houn
Life of this patent
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Abstract
A furnace with a large quartz tube with a gas inlet on one end, and a large opening at the other end for introducing and withdrawn wafers on a support. At least one small quartz tube is provided within and adjacent the sidewall of the large tube that has a gas inlet on one end outside of the large tube, and apertures in the sidewall. In use, a major stream of gas is provided by a gas inlet on the large tube that flows longitudinally through the large tube. A series of secondary streams of gas are provided from the apertures in the small tube that flow perpendicular to the major stream and across the surfaces of the wafers.
Claims8
An improved furnace for semiconductor device fabrication comprising:
- a furnace tube formed of quartz having a large opening on one end to permit introduction and withdrawal of semiconductor wafers on a support;
- at least one small quartz tube in said furnace tube extending parallel to the longitudinal axis of the furnace tube and spaced therefrom and located on a side of said semiconductor wafers when said support is positioned in said furnace tube;
- said at least one small quartz tube having one open end for a gas inlet protruding outside of said furnace tube, and the opposite end being sealed by an end wall, said at least one small quartz tube mounted on said end wall with a swivel joint;
- said at least one small quartz tube having a plurality of small holes of a diameter less than the inside diameter of the small tubes located along the tube surface facing the central longitudinal axis of the furnace tube;
- a closure member for said large opening in said furnace tube, and
- a means to heat the interior of said furnace tube.
Dependencies are inferred from the claim text.