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OwnerEvgeny Invievich Givargizov, Viktor Vladimirovich Zhirnov +2inventors
InventorsEvgeny Invievich Givargizov, Viktor Vladimirovich Zhirnov, Alla Nikolaevna Stepanova, Lidiya Nikolaevna Obolenskaya
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A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.
A matrix field-emission cathode comprising a single-crystalline silicon substrate and an array of silicon tip emitters located on the silicon substrate, wherein the silicon tip emitters are made of silicon whiskers epitaxially grown on the single-crystalline silicon substrate and each of the emitters also functions as a ballast resistor and has a resistance greater than about 5.times.10.sup.4 ohm.
A field emission display device comprising a matrix field emission cathode of silicon tip emitters located on conductive stripes formed on a surface of a single-crystalline silicon substrate, and an anode with phosphor and conductive layer formed on a surface of the anode, said surface of the single-crystalline silicon substrate and said surface of the anode being positioned facing and substantially parallel to each other, wherein each of the emitters also functions as a ballast resistor and has a resistance greater than about 5.times.10.sup.4 Ohm, and the anode comprises stripes formed from said phosphor layer and conductive layer whose projections on the cathode are perpendicular to the conductive stripes.
A matrix field-emission cathode containing a single-crystalline silicon substrate and an array of silicon tip emitters located on the silicon substrate, wherein the silicon tip emitters are made of silicon whiskers epitaxially grown on the single-crystalline silicon substrate, and the ratio of the height h of the emitter to the diameter D at its basis is 1 or more.
A matrix field-emission cathode containing a single-crystalline silicon substrate and an array of silicon tip emitters located on the silicon substrate, wherein the silicon tip emitters are made of silicon whiskers epitaxially grown on the single-crystalline silicon substrate, and the angle at the emitter apex .alpha. is 30.degree. or less.
A matrix field-emission cathode containing a single-crystalline silicon substrate and an array of silicon tip emitters located on the silicon substrate, wherein the silicon tip emitters are made of silicon whiskers epitaxially grown on the single-crystalline silicon substrate, and the diameter D of the emitter is 1 to 10 .mu.m, and the specific resistivity of the emitter material is larger than 1 Ohm-cm.
A matrix field-emission cathode comprising a single-crystalline silicon substrate and an array of silicon tip emitters located on the silicon substrate, wherein number density of the silicon tip emitters is about 2.times.10.sup.5 cm.sup.-2 or less.
A field emission display device comprising a matrix field emission cathode having a single-crystalline silicon substrate, said substrate having a first surface with silicon emitters located on and projected away from said first surface, an anode having a second surface facing and substantially parallel with the first surface of the substrate, said first and second surfaces forming a gap therebetween, wherein each of the silicon emitters has a resistance substantially equal to the resistance existing between the gap.
Dependencies are inferred from the claim text.