Processing method and apparatus using focused ion beam generating means

A focused ion beam processing method applied to fine machining using a focused ion beam, comprising the steps of:

• previously storing machining data;
• generating a plasma by resonating a microwave in a magnetic field in a plasma ion source;
• extracting an ion beam from the generated plasma into a sample chamber in which a sample is disposed, the current value of the ion beam being controlled on the basis of the previously stored data;
• and
• irradiating the controlled ion beam to the sample, thereby processing the sample.

A focused ion beam processing method of machining a sample using a focused ion beam, comprising the steps of:

• generating a plasma by resonating a microwave in a magnetic field in a plasma ion source;
• extracting an ion beam from the generated plasma into a sample chamber in which a sample is disposed;
• and
• irradiating the extracted ion beam to the sample, thereby conducting a desired processing work for the sample;
• wherein the extraction and stoppage of the ion beam from the plasma are conducted by control of a current value of the extracted ion beam.

A focused ion beam processing method of processing a sample using a focused ion beam, comprising the steps of:

• generating a plasma by resonating a microwave in a magnetic field in a plasma ion source;
• extracting an ion beam from the generated plasma into a sample chamber in which a sample is disposed, a current value of the ion beam being controlled;
• and
• irradiating the extracted ion beam controlled in its current value to the sample, thereby conducting a desired processing work for the sample.

A focused ion beam processing apparatus comprising:

• sample chamber means for installing therein a sample to be processed;
• a plasma ion source for generating therein microwave discharge plasma by resonating a microwave in a magnetic field;
• a reference electrode disposed in the plasma ion source;
• an ion extraction electrode for extracting an ion beam from the microwave discharge plasma generated in the plasma ion source into the sample chamber means;
• and
• voltage applying means for applying a voltage between the reference electrode and the ion extraction electrode.

A focused ion beam processing apparatus comprising:

• sample chamber means for installing therein a sample to be processed;
• a plasma ion source for generating therein microwave discharge plasma by resonating a microwave in a magnetic field;
• ion beam extracting means for extracting an ion beam from the microwave discharge plasma generated in the plasma ion source into the sample chamber means;
• ion beam irradiating means for irradiating the extracted ion beam to a desired portion on the sample;
• and
• current value control means for controlling a current value of the ion beam extracted by the ion beam extracting means.