Integrated circuit chip wiring structure with crossover capability and method of manufacturing the same

A method for manufacturing an integrated circuit chip having a metallization interconnect system comprising the steps of:

• providing a substrate;
• depositing a first etch stop on the substrate;
• depositing a first layer of insulative material on the first etch stop and a second etch stop on the first layer of insulative material, the first layer of insulative material and the second etch stop layer having at least one first metal line therein;
• depositing a third etch stop layer on the second etch stop layer and first metal line;
• depositing a second layer of insulative material on the third etch stop layer;
• defining a second metal line trough having a first region and a second region, wherein the first region has a greater width than the second region;
• depositing a conformal coating over the entire surface defined by the trough and the third etch stop layer, thereby filling the second region of the metal line trough but not completely filling the first wire region;
• etching the conformal coating, thereby exposing a portion of the third etch stop layer in the first region of the metal wire trough while leaving the conformal coating in the second region;
• removing the exposed portion of the third etch stop layer in the first region;
• removing the conformal coating that was left in the second region, thereby exposing the third etch stop layer in the second region which acts as an insulative barrier;
• metallizing the trough;
• and
• planaring the surface, thereby forming the metallization interconnect system of the integrated circuit chip wherein the insulative barrier maintains electrical isolation between the metal line and the metal wire in the second region.

A method for manufacturing a metallization interconnect system having:

• a first layer of insulative material having at least one first metal line therein;
• an insulative barrier;
• and a second layer of insulative material on the surface of the first layer of insulative material having a second metal line therein, wherein the second metal line has a first region with a greater width than a second region, comprising the steps of:
• selectively removing the insulative barrier from the first region before metallizing the second metal line.