Low temperature seeding process for ferroelectric memory device
AssigneesCeram Incorporated, Sharp Kabushiki Kaisha, Virginia Tech Intellectual Properties, Inc.
InventorsSeshu B. Desu, Chi Kong Kwok
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Abstract
A process for producing a ferroelectric lead zirconate titanate dielectric for a semiconductor device by applying a lead titanate seeding layer to a substrate before applying the lead zirconate titanate film, and a semiconductor device produced in accordance with the process. The lead titanate seeding layer allows the subsequent lead zirconate titanate to be annealed at a significantly lower seeding temperature, to lessen interdiffusion among the films, electrodes and substrate and to lessen thermal stresses.
Claims8
A process for producing a ferroelectric perovskite lead zirconate titanate film on a substrate, comprising:
- applying a lead titanate film to said substrate to produce a seeding layer on the substrate;
- and applying a lead zirconate titanate film over the said seeding layer;
- and applying a thin lead oxide layer over the said lead zirconate titanate film.
Dependencies are inferred from the claim text.