Electro-optical device and method of fabricating same

An electro-optical device having gate lines and data lines arranged in rows and columns on a common substrate, pixel electrodes disposed at intersections of the gate lines and data lines, and TFTs connected with the pixel electrodes, said electro-optical device comprising:

• a first interlayer dielectric film that covers said gate lines;
• a second interlayer dielectric film formed by LPD so as to cover said data lines, said second interlayer dielectric film being made from one or more layers of an organic resinous material;
• a black matrix formed over said TFTs, gate lines, and data lines via said second interlayer dielectric film;
• a third interlayer dielectric film formed by LPD so as to cover said black matrix, said third interlayer dielectric film being made from one or more layers of an organic resinous material or inorganic material, said third interlayer dielectric film having a relative dielectric constant larger than that of said second interlayer dielectric film;
• and
• pixel electrodes formed on said third interlayer dielectric film, whereby retaining capacitors are created between said black matrix and said pixel electrodes via said third interlayer dielectric film.

An electro-optical device having gate lines and data lines arranged in rows and columns on a common substrate, pixel electrodes disposed at intersections of the gate lines and data lines, and TFTs connected with the pixel electrodes, said electro-optical device comprising:

• a first interlayer dielectric film that covers said gate lines;
• a second interlayer dielectric film formed so as to cover said data lines;
• a black matrix formed over said TFTs via said second interlayer dielectric film;
• a third interlayer dielectric film formed so as to cover said black matrix;
• and
• pixel electrodes formed on said third interlayer dielectric film, whereby retaining capacitors are created between said black matrix and said pixel electrodes via said third interlayer dielectric film.

A method of fabricating an electro-optical device having gate lines and data lines arranged in rows and columns on a common substrate, pixel electrodes disposed at intersections of the gate lines and data lines, and TFTs connected with the pixel electrodes, said method comprising the steps of:

• forming a first interlayer dielectric film that covers said gate lines;
• forming a second interlayer dielectric film out of an organic resinous material by LPD so as to cover said data lines;
• forming a layer of a metal on said second interlayer dielectric film to form a black matrix;
• forming a third interlayer dielectric film out of an organic resinous material or inorganic material by LPD so as to cover said black matrix;
• forming contact holes in said second and third interlayer dielectric films;
• and
• forming pixel electrodes out of a transparent conductive film on said third interlayer dielectric film, whereby creating retaining capacitors between said black matrix and said pixel electrodes via said third interlayer dielectric film.