Method for producing a bipolar semiconductor device having SiC-based epitaxial layer
AssigneeABB Research Ltd.
InventorWilly Hermansson
Life of this patent
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Abstract
A method for producing a bipolar semiconductor device having a first layer doped according to a first doping type, the first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device of a doping type opposite to that of the first layer in a forward conducting state of the device, comprises the steps of a) epitaxially growing the first layer and b) providing at least one region of the first layer with the minority charge carriers having a lifetime lower than in other parts of the first layer, the lower lifetime region of the first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to the first layer for the growth thereof when the region is grown.
Claims18
A method for producing a bipolar semiconductor device having a first layer doped with a first doping type being one of n and p, said first layer being adapted to have minority charge carriers injected thereinto from a second layer of the device with a doping type opposite to that of the first layer in a forward conducting state of the device, said method comprising the steps of a) epitaxially growing said first layer and b) providing at least one region of said first layer with said minority charge carriers having a lifetime lower than in other parts of said first layer, said lower lifetime region of said first layer being formed directly during the epitaxial growth of this region by changing composition of substances fed to said first layer for the growth thereof when said region is grown.
Dependencies are inferred from the claim text.