US 5,805,382 A · Integrated conductor magnetic recording head and suspension having cross-over integrated circuits for noise reduction

Abstract

The present invention is an integral magnetic head suspension and method for making the same. The integral suspension, with or without the head, contains integrated conductive circuits that have multiple cross overs for noise reduction. The suspension is fabricated completely on silicon (Si) wafers using semiconductor processes. A N+ silicon layer is disposed over a P- silicon wafer. The N+ silicon layer and the P- silicon wafer are thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, and to drive the N+ silicon into the P- silicon wafer. A layer of polysilicon is disposed over the silicon oxide layer on top of the N+ silicon layer. One or more pairs of conductive traces having multiple cross-overs are fabricated on the layer of polysilicon. Optimally, a magnetic head is simultaneously fabricated on the suspension. The polysilicon layer is then patterned to define the head structure and suspension structure as one piece. Finally, the magnetic head and suspension are separated from the wafer by removing the first silicon oxide layer by a chemical etchant and the P- silicon wafer by selective etching. The head and suspension are released from the silicon wafer as a single structure using the above-described semiconductor processes. Accordingly, no grinding or cutting is used to define the dimensions of the head. Further, no processes are required to attach the head to the suspension and the suspension can be made from low mass materials such as silicon (Si) or Al.sub.2 O.sub.3.

Claims38

Dependent claims

A magnetic recording head suspension assembly for a magnetic storage system, comprising:

a P- silicon wafer;
a N+ silicon layer, disposed over the P- silicon wafer, the N+ silicon layer and the P- silicon wafer being thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, the N+ silicon being driven into the P- silicon wafer;
a layer of polysilicon, disposed over the silicon oxide layer over the N+ silicon layer, the polysilicon layer being patterned to define a head structure and a suspension as one piece;
and
at least one pair of conductive traces disposed on the polysilicon, the pair of conductive traces comprising a first conductive trace having at least one straight portion and at least one angled portion extending from said straight portion of the first conductive trace, and a second conductive trace having at least one straight portion and at least one angled portion extending from said straight portion of the second conductive trace, the at least one pair of conductive traces being disposed on the polysilicon such that the angled portion of the first conductive trace crosses the angled portion of the second conductive trace, and the straight portion of the first conductive trace is substantially parallel to the straight portion of the second conductive trace,
wherein the suspension is separated from the wafer by removing the bottom silicon oxide layer by a chemical etchant, and the P- silicon wafer by selective etching.

3 more elements

A magnetic storage system, comprising:

a housing;
at least one magnetic storage disk disposed within the housing;
a spindle, coupled to the disk, the spindle having an axis of rotation;
a drive means, coupled to the spindle, for rotating the spindle and disk about the axis of rotation;
an actuator, disposed within the housing proximate to the disk;
an integral magnetic head and suspension assembly, coupled to the actuator, the actuator moving the integral magnetic head and suspension assembly relative to the surface of the storage disk, wherein the integral magnetic head and suspension assembly comprises:
a P- silicon wafer;
a N+ silicon layer, disposed over the P- silicon wafer, the N+ silicon layer and the P- silicon wafer being thermally oxidized to generate a bottom silicon oxide layer opposite the N+ layer side of the wafer and a top silicon oxide layer on the N+ side of the wafer, the N+ silicon being driven into the P- silicon wafer;
a layer of polysilicon, disposed over the top silicon oxide layer, the polysilicon layer being patterned to define the head structure and a suspension as one piece;
at least one pair of conductive traces disposed on the polysilicon, the pair of conductive traces comprising a first conductive trace having at least one straight portion and at least one angled portion extending from said straight portion of the first conductive trace, and a second conductive trace having at least one straight portion and at least one angled portion extending from said straight portion of the second conductive trace, the pair of traces being disposed on the polysilicon such that the angled portions of the conductive traces cross one another, and the straight portions of the traces are substantially parallel to each other;
and
a magnetic head, disposed on the polysilicon, the magnetic head being separated from the wafer by removing the bottom silicon oxide layer by a chemical etchant, and the P- silicon wafer by selective etching.

9 more elements

Dependencies are inferred from the claim text.

Integrated conductor magnetic recording head and suspension having cross-over integrated circuits for noise reduction

Life of this patent

Integrated conductor magnetic recording head and suspension having cross-over integrated circuits for noise reduction

Life of this patent

Abstract

Claims38