Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers

A laser comprising:

• a modulated gain region;
• an absorber region;
• and
• a CW gain flared region disposed between said modulated gain region and absorber region, said modulated region and absorber region having differently sized cross sections and said CW flared region transitioning between said different cross sections of said modulated region and absorber region,
• wherein said modulated region has a cross section less than said absorber region and said CW flared region tapers up to said larger cross section of said absorber region.
• whereby a mode-locked laser with increased pulse power output is realized.

A laser comprising:

• a modulated gain region;
• an absorber region;
• and
• a CW gain flared region disposed between said modulated gain region and absorber region, said modulated region and absorber region having differently sized cross sections and said CW flared region transitioning between said different cross sections of said modulated region and absorber region,
• wherein said CW flared region is flared both toward said modulated gain region and said absorber region and has a minimum cross section between said modulated gain region and absorber region and has matching cross sections adjacent to said modulated gain region and absorber region,
• whereby a mode-locked laser with increased pulse power output is realized.

A laser comprising:

• a first reflector;
• a saturable absorber region coupled to said first reflector and having an output;
• a tapered gain region having an input coupled to said output of said saturable absorber region;
• a modulated gain region having an input coupled to an output of said tapered gain region;
• a flared CW gain region having an input coupled to an output of said modulated gain region;
• and
• a second reflector disposed at an output of said CW flared gain region so that the mode-locked laser is provided with higher pulsed output.

A pulsed laser assembly comprising:

• a mode-locked semiconductor laser;
• a tapered semiconductor optical amplifier having an input optically coupled to an output of said mode-locked semiconductor laser, said mode-locked laser having two segments comprising a gain section and an absorber section;
• and
• means for modulating said tapered optical amplifier synchronously with said mode-locked laser,
• whereby increased power output is realized.

A pulsed laser assembly comprising:

• a mode-locked semiconductor laser;
• and
• a tapered semiconductor optical amplifier having an input optically coupled to an output of said mode-locked semiconductor laser,
• wherein said tapered optical amplifier is a CW gain amplifier and further comprises at least one additional cascaded amplifier stage coupled to an output of said tapered optical amplifier, said stage comprised of a modulated gain section having an output coupled to a CW gain flared section,
• whereby increased power output is realized.

A laser comprising:

• a first reflector;
• a saturable absorber region coupled to said first reflector and having an output;
• a CW tapered gain region having an input coupled to said output of said saturable absorber region;
• a modulated gain region having an input coupled to an output of said tapered gain region;
• a flared CW gain region having an input coupled to a output of said modulated gain region;
• and
• a second reflector disposed at an output of said modulated gain region so that the mode-locked laser is provided with higher pulsed output.