Depletion region stopper for PN junction in silicon carbide
AssigneeABB Research Ltd.
InventorsMietek Bakowski, Ulf Gustafsson
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Abstract
A semiconductor component comprises a pn junction having a first conductivity type layer and a second conductivity type layer, both being doped layers of silicon carbide (SiC), the first conductivity type layer being lower doped and being provided with a depletion region stopper (DRS) located outside the pn junction, the DRS having stepwise or continuously increasing effective sheet charge density of the first conducting type in a radial direction towards the outer edge of the semiconductor component.
Claims8
A semiconductor component comprising a pn junction having a first conductivity type layer and a second conductivity type layer, both being doped layers of silicon carbide (SiC), the first conductivity type layer being lower doped and being provided with a depletion region stopper (DRS) located outside the pn junction, when fully depleted said depletion region stopper (DRS) having stepwise or continuously increasing effective sheet charge density of the first conducting type in a radial direction towards the outer edge of the semiconductor component.
A semiconductor component comprising a wafer of a first conducting type having a low doped layer at a surface thereof, and a high doped layer of the second conducting type at a limited area of said surface of the wafer, said low doped layer and said high doped layer being made of silicon carbide and forming a pn junction, said pn junction being surrounded by a depletion region stopper (DRS) having zones of the first conducting type, the doping levels of said zones or the areas of said zones being so selected that the effective sheet charge density of the depletion region stopper (DRS), when fully depleted, increases towards the outer edge of the semiconductor component.
Dependencies are inferred from the claim text.