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US 5,793,787 AGranted
Type II quantum well laser with enhanced optical matrix
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsJerry R. Meyer, Craig A. Hoffman, Filbert J. Bartoli
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Abstract
A type II multiple quantum well, 4 constituent active region, optically clad electrically pumped and optically pumped laser for emitting at a wavelength greater than or equal to about 2.5 microns is disclosed. The active region comprises one or more periods, each period further comprising a barrier layer, a first conduction band layer, a valence band layer and a second conduction band layer.
Claims29
An electrically pumped type II quantum well laser structure comprising:
- (a) an active region further comprising one or more periods, said period further comprising:
- (i) a barrier layer having a first index of refraction, a first thickness, a top and a bottom face;
- (ii) an adjacent first conduction band layer having a second index of refraction, a second thickness, a top and bottom face, said top face of said first conduction layer being in contact with said bottom face of said top barrier layer;
- (iii) an adjacent valence band layer having a third index of refraction, a third thickness, a top and bottom face, said top face of said valence band layer being in contact with said bottom face of said first conduction band layer;
- (iv) an adjacent second conduction band layer having a fourth index of refraction, a fourth thickness, a top and bottom face, said top face of said second conduction band layer being in contact with said bottom face of said valence band layer wherein said barrier layer and said valence band layer are of different materials;
- wherein said active region is bounded by
- (b) a p-doped optical cladding layer having a fifth index of refraction, a fifth thickness, a top and bottom face, said top face of said p-doped optical cladding layer being in contact with and adjacent to said bottom face of said second conduction layer;
- (c) an n-doped optical cladding layer having a sixth index of refraction, a sixth thickness, a top and bottom face, said bottom face of said n-doped optical cladding layer adjacent to and in contact with said top face of said barrier layer;
- (d) an n-doped cap layer having a seventh thickness, a top and bottom face, said bottom face of said n-doped cap layer adjacent to and in contact with said top face of said n-doped optical cladding layer;
- (e) a p-doped substrate layer having an eighth thickness, a top and bottom face, said top face of said p-doped substrate layer being adjacent to and in contact with said bottom face of said p-doped optical cladding layer;
- and
- (f) a means for providing a threshold current to electrically pump said active region sufficient to produce a laser output at a wavelength of greater than or equal to about 2.5 microns.
9 more elements
An optically pumped type II quantum well laser structure comprising:
- (a) an active region further comprising one or more periods, said period further comprising:
- (i) a barrier layer having a first index of refraction, a first thickness, a top and a bottom face;
- (ii) an adjacent first conduction band layer having a second index of refraction, a second thickness, a top and bottom face, said top face of said first conduction layer being in contact with said bottom face of said top barrier layer;
- (iii) an adjacent valence band layer having a third index of refraction, a third thickness, a top and bottom face, said top face of said valence band layer being in contact with said bottom face of said first conduction band layer;
- (iv) an adjacent second conduction band layer having a fourth index of refraction, a fourth thickness, a top and bottom face, said top face of said second conduction band layer being in contact with said bottom face of said valence band layer wherein said barrier layer and said a valence band layer are of different materials;
- wherein said active region is bounded by
- (b) a first optical cladding layer having a fifth index of refraction, a fifth thickness, a top and bottom face, said top face of said first optical cladding layer being in contact with and adjacent to said bottom face of said second conduction layer;
- (c) a second optical cladding layer having a sixth index of refraction, a sixth thickness, a top and bottom face, said bottom face of said second optical cladding layer adjacent to and in contact with said top face of said barrier layer;
- (d) a substrate layer having an eighth thickness, a top and bottom face, said top face of said substrate layer being adjacent to and in contact with said bottom face of said second optical cladding layer;
- and
- (e) a means for optically pumping said active region sufficient to produce a laser output at a wavelength of greater than or equal to about 2.5 microns.
8 more elements
An electrically pumped type II quantum well laser structure comprising:
- (a) an active region further comprising one or more periods, said period further comprising:
- (i) a barrier layer having a first index of refraction, a first thickness, a top and a bottom face;
- (ii) an adjacent first conduction band layer having a second index of refraction, a second thickness, a top and bottom face, said top face of said first conduction layer being in contact with said bottom face of said top barrier layer;
- (iii) an adjacent valence band layer having a third index of refraction, a third thickness, a top and bottom face, said top face of said valence band layer being in contact with said bottom face of said first conduction band layer;
- (iv) an adjacent second conduction band layer having a fourth index of refraction, a fourth thickness, a top and bottom face, said top face of said second conduction band layer being in contact with said bottom face of said valence band layer wherein said barrier layer and said valence band layer are of different materials;
- wherein said active region is bounded by
- (b) an n-doped optical cladding layer having a fifth index of refraction, a fifth thickness, a top and bottom face, said top face of said n-doped optical cladding layer being in contact with and adjacent to said bottom face of said second conduction layer;
- (c) a p-doped optical cladding layer having a sixth index of refraction, a sixth thickness, a top and bottom face, said bottom face of said p-doped optical cladding layer adjacent to and in contact with said top face of said barrier layer;
- (d) a p-doped cap layer having a seventh thickness, a top and bottom face, said bottom face of said p-doped cap layer adjacent to and in contact with said top face of said p-doped optical cladding layer;
- (e) an n-doped substrate layer having an eighth thickness, a top and bottom face, said top face of said n-doped substrate layer being adjacent to and in contact with said bottom face of said n-doped optical cladding layer;
- and
- (f) a means for providing a threshold current to electrically pump said active region sufficient to produce a laser output at a wavelength of greater than or equal to about 2.5 microns.
9 more elements
Dependencies are inferred from the claim text.