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US 5,793,115 AGranted
Three dimensional processor using transferred thin film circuits
AssigneeKopin Corporation
InventorsPaul M. Zavracky, Matthew Zavracky, Duy-Phach Vu, Brenda Dingle
Life of this patent
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Abstract
A multi-layered structure is fabricated in which a microprocessor is configured in different layers and interconnected vertically through insulating layers which separate each circuit layer of the structure. Each circuit layer can be fabricated in a separate wafer or thin film material and then transferred onto the layered structure and interconnected.
Claims34
A data processing device comprising;
- a first circuit layer formed in a semiconductor material and having a controller in the first circuit layer to control a data processing operation;
- a second circuit layer formed in a thin film silicon material of a silicon-on-insulator (SOI) structure and having a logic unit in the second circuit layer that is connected with and controlled by the controller;
- and
- an adhesive layer positioned between and securing the first circuit layer with the second circuit layer, the adhesive layer having interconnects extending between the first circuit layer and the second circuit layer to conduct control signals between the controller and the logic unit.
1 more element
An optoelectronic data processing device comprising;
- a first circuit layer formed in a semiconductor material and having a controller in the first circuit layer to control a data processing operation;
- a second circuit layer formed in a thin film silicon material of a silicon-on-insulator structure and having a light emitting device in the second circuit layer that is connected with and controlled by the controller;
- and
- an adhesive layer positioned between and securing the first circuit layer with the second circuit layer, the adhesive layer having interconnects extending between the first circuit layer and the second circuit layer to conduct control signals between the controller and the logic light emitting device.
1 more element
A parallel processing device comprising;
- a first circuit layer formed in a semiconductor material and having a controller and logic unit in the first circuit layer to control and perform a data processing operation;
- a second circuit layer formed in a thin film silicon material of a silicon-on-insulator (SOI) structure and having a second controller and a second logic unit in the second circuit to control and perform a second data processing operation;
- and
- an adhesive layer positioned between and securing the first circuit layer with the second circuit layer, the adhesive layer having interconnects extending between the first circuit layer and the second circuit layer to conduct control signals between the first circuit layer and the second circuit layer.
1 more element
A multi-layered data processing device comprising;
- a first circuit layer formed in a semiconductor material and having a controller in the first circuit layer to control a data processing operation;
- a second circuit layer formed in a thin film silicon material of a silicon-on-insulator structure and having a logic unit in the second circuit layer that is connected with and controlled by the controller;
- a circuit routing layer positioned between the first circuit layer and the second circuit layer, the circuit routing layer having interconnects extending in a plane parallel to the first circuit layer which conduct signals between the first circuit layer and the second circuit;
- and
- an adhesive layer positioned between and securing the first circuit layer with the second circuit layer, the adhesive layer having interconnects extending between the first circuit layer, the routing layer and the second circuit layer to conduct signals between the first circuit layer and the second circuit layer.
2 more elements
Dependencies are inferred from the claim text.