Optical semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsToshitaka Aoyagi, Yasunori Miyazaki
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Abstract
A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said contact layer; a front surface electrode formed on said insulating film; a pair of alignment marks formed at the same time of the optical waveguide; and a back surface electrode formed on said substrate. The alignment marks are formed from the same material, i.e., the same crystal as said optical waveguide. Accordingly, it is possible to improve precision of the relative position between said optical waveguide and said alignment marks.
Claims9
An optical semiconductor device comprising:
- a substrate;
- an optical waveguide disposed on said substrate and including, sequentially arranged, a first cladding layer, an active layer, and a second cladding layer;
- and
- an alignment mark disposed on said and having first, second, and third layers of essentially the same materials as and generally co-planar with said first cladding layer, said active layer, and said second cladding layer, respectively.
Dependencies are inferred from the claim text.