Transfer method for non-critical photoresist patterns
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYung-Dar Chen
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Abstract
A method of direct transfer printing of a photoresist pattern layer onto the first pattern layer of a phase shift photomask reticle is described which allows completion of the photomask pattern at a much lower cost than the conventional multiple-pass photolithographic process. The direct transfer of the resist pattern from printing plate to mask surface by means of a platen is especially suitable for non-critical regions such as border regions, seal bands, identification marks, and the like.
Claims12
A method in the fabrication of photomasks for the manufacture of semiconductor integrated circuits which allows optical phase-shifting properties to be produced in the photomask comprising:
- providing a coated substrate;
- generating a first portion, comprising a first coating and a second coating, of a photomask pattern;
- forming a second resist pattern on the first portion of the photomask pattern layer by direct transfer;
- etching away the exposed portions of the second coating;
- and
- stripping of the resist mask.
A method for fabrication of phase shift photomask reticles for step-and repeat photolithography of semiconductor integrated circuits comprising:
- forming a first pattern layers on a substrate coated with a layer of molybdenum silicon oxynitride and a layer of chromium plus chromium oxides by conventional photolithography using a photoresist pattern mask;
- depositing a second resist pattern layer on the first pattern by direct transfer;
- exposing and developing the second resist layer;
- etching the exposed chromium/chromium oxide layer;
- and
- stripping the first photoresist pattern mask.
A phase shift photomask reticle for step-and-repeat photolithographic processes used in fabrication of semiconductor integrated circuits comprising:
- a transparent substrate coated with an opaque layer of chromium and chromium oxide over an underlying layer of molybdenum silicon oxynitride;
- a first pattern portion generated by conventional photolithographic processing;
- a second pattern portion layer produced by direct transfer printing of said pattern onto and completing the pattern layer.
Dependencies are inferred from the claim text.