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US 5,788,799 AGranted
Apparatus and method for cleaning of semiconductor process chamber surfaces
AssigneeApplied Materials, Inc.
InventorsRobert J. Steger, Fred C. Redeker
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AssigneeApplied Materials, Inc.
InventorsRobert J. Steger, Fred C. Redeker
Estimating the term…
In accordance with the present invention, a temperature-controlled ceramic liner or barrier is used adjacent to process chamber surfaces during a plasma-comprising process, with the liner or barrier temperature being set to reduce the formation of deposits upon or to aid in the removal of deposits from the liner surface during the processing of a semiconductor substrate within the process chamber. In the alternative, cleaning of the process chamber surface is carried out after the semiconductor substrate is removed from the chamber, and the liner or barrier temperature is set to assist in the removal of deposits from the liner or barrier surface. Deposits accumulate on some process chamber surfaces faster than on others. Since the rate of deposit formation or removal is temperature dependent, the temperature-controlled ceramic liner may be constructed to enable independent temperature settings at different locations within the liner. When multiple temperature-controllable barriers are used, each barrier may be set at a different temperature in proportion to the deposit formation reduction or removal requirements in the area of the process chamber protected by the particular barrier. In a preferred embodiment of the invention, the plasma used either during the semiconductor substrate processing or during a cleaning process after removal of the substrate from the process chamber is generated externally from the process chamber and is fed into the process chamber through a conduit. The conduit or at least the interior surface of the conduit which contacts the plasma is comprised of a halogen-containing material. The halogen used in the conduit material may be selected in consideration of the active species which is to be fed through the interior of the conduit.
A temperature-controlled ceramic barrier which is used adjacent to semiconductor process chamber surfaces during a plasma-comprising process, wherein said ceramic barrier temperature is controlled to reduce the formation of deposits upon, or to aid in the removal of deposits from said ceramic barrier during the processing of a semiconductor substrate within said process chamber.
A temperature-controlled ceramic barrier which is used adjacent to semiconductor process chamber surfaces during the cleaning of said process chamber, subsequent to removal of semiconductor workpieces or substrates from said process chamber, wherein said ceramic barrier temperature is controlled to assist in the removal of deposits from said barrier surface.
A semiconductor processing device comprising a ceramic surface and having a means for controlling the temperature of said ceramic surface, wherein said ceramic surface temperature is controlled to reduce the formation of deposits upon, or to aid in the removal of deposits from said ceramic surface during the processing of a semiconductor substrate.
A semiconductor processing device comprising a ceramic surface and having a means for controlling the temperature of said ceramic surface, wherein said ceramic surface temperature is controlled during the cleaning of said semiconductor processing device to assist in the removal of deposits from said ceramic surface.
A method of reducing the formation of deposits upon, or aiding in the removal of deposits from a temperature-controlled ceramic barrier in a semiconductor process chamber wherein said method comprises adjusting the temperature of said temperature-controlled ceramic barrier during a plasma-assisted deposition process.
A method of removing deposits from a ceramic barrier during a cleaning process within a semiconductor process chamber, wherein said method comprises adjusting the temperature of said barrier during a plasma-assisted cleaning process.
A method for plasma-assisted cleaning of a semiconductor processing device comprising a ceramic surface, said method comprising:
A method for transporting a plasma-activated species from a remote location to a plasma-assisted semiconductor processing chamber in a manner which reduces the inactivation of such plasma-activated species during transport, said method comprising:
A conduit suitable for transporting a plasma-activated species from a remote plasma generation source to a plasma-assisted semiconductor processing chamber in a manner which reduces the inactivation of such plasma-activated species during transport, at least an interior surface of said conduit being comprised of a halogen-containing material selected based on compatibility with an active species which is to be transported through the interior of said conduit.
A semiconductor processing device comprising a temperature-controlled ceramic surface, wherein said ceramic surface temperature is controlled to reduce the formation of deposits upon or to aid in the removal of deposits from said ceramic surface.
A method of removing deposits from a ceramic barrier during a cleaning process within a semiconductor process chamber, wherein said method comprises adjusting the temperature of said barrier.
Dependencies are inferred from the claim text.