Semiconductor light-emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsJohji Nishio, Hidetoshi Fujimoto, Kazuhiko Itaya
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Abstract
Disclosed is a semiconductor light-emitting device, comprising a substrate, a thin film formed on the substrate and containing silicon carbide as a main component, a buffer layer formed on the thin film and consisting of a gallium nitride-based material, and a laminate structure formed on the buffer layer and consisting of a plurality of gallium nitride-based material layers, wherein the total thickness of the substrate and the thin film is at least twice the thickness of the buffer layer and is smaller than the thickness of the laminate structure.
Claims10
A semiconductor light-emitting device, comprising:
- a substrate;
- a buffer layer on the substrate comprising a gallium nitride-based material having a thickness less than half the thickness of the substrate;
- and
- a laminate structure on the buffer layer comprising a plurality of gallium nitride-based material layers,
- wherein said laminate structure comprises an active layer having a multi-quantum well structure comprising a plurality of pairs of layers comprising a barrier layer and a well layer, and the well layers have a carbon content higher than the barrier layers.
A light-emitting diode, comprising:
- a substrate;
- a buffer layer on the substrate comprising a gallium nitride-based material having a thickness less than half the thickness of the substrate;
- and
- a laminate structure on the buffer layer comprising a plurality of gallium nitride-based material layers,
- wherein said laminate structure comprises an active layer having a multi-quantum well structure comprising a plurality of pairs of layers comprising a barrier layer and a well layer, and the well layers have a carbon content higher than the barrier layers.
Dependencies are inferred from the claim text.