Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers

A method for removing waste matter material from a planarizing surface of a fixed-abrasive polishing pad used in chemical-mechanical planarization of a semiconductor wafer, the abrasive polishing pad having a suspension medium, a plurality of abrasive particles fixedly suspended within the suspension medium, and a planarizing surface with a plurality of exposed abrasive particles, the method comprising the steps of:

• depositing a conditioning solution onto the planarizing surface that reacts with the waste matter material to form reacted waste matter material that may be removed with a first frictional force;
• pressing a non-abrasive refurbishing element against the planarizing surface in the presence of the conditioning solution with a force greater than the first frictional force and less than a second frictional force at which the refurbishing element abrades the polishing pad;
• and
• moving at least one of the fixed-abrasive pad and the non-abrasive refurbishing element with respect to the other to impart relative motion therebetween, the non-abrasive refurbishing element dislodging and removing the reacted waste matter material from the planarizing surface without substantially abrading the planarizing surface of the fixed-abrasive polishing pad.

A method for planarizing a semiconductor wafer, comprising:

• providing a fixed-abrasive polishing pad having a suspension medium, a plurality of abrasive particles fixedly dispersed in the suspension media, and a planarizing surface with a plurality of exposed abrasive particles;
• depositing a liquid solution that breaks down waste matter material onto at least a portion of the planarizing surface of the fixed-abrasive polishing pad;
• pressing a non-abrasive refurbishing element against the planarizing surface in the presence of the conditioning solution;
• engaging the wafer with the planarizing surface;
• and
• moving the fixed-abrasive pad with respect to the non-abrasive refurbishing element and the wafer, wherein the planarizing surface removes material from the wafer, and wherein the conditioning solution and the non-abrasive refurbishing element remove the waste matter material from the planarizing surface without substantially altering the exposed abrasive particles at the planarizing surface of the polishing pad.

A method for planarizing a semiconductor wafer, comprising:

• providing a fixed-abrasive polishing pad having a suspension medium, a plurality of abrasive particles fixedly suspended in the suspension medium, and a planarizing surface with a plurality of exposed abrasive particles;
• translating at least one of the fixed-abrasive polishing pad and the semiconductor wafer with respect to the other to impart relative motion therebetween;
• pressing the semiconductor wafer against the fixed-abrasive polishing pad to remove material from the wafer;
• and
• engaging a non-abrasive refurbishing element with the planarizing surface, wherein the non-abrasive refurbishing element removes waste matter material from the planarizing surface without substantially altering the exposed abrasive particles at the planarizing surface.