Oriented ferroelectric thin film element
AssigneeFuji Xerox Co., Ltd.
InventorKeiichi Nashimoto
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Abstract
An oriented ferroelectric thin film element has a structure in which an epitaxial or oriented buffer thin film is formed on a semiconductor single crystal substrate, an epitaxial or oriented metallic thin film is formed on the buffer thin film, and an epitaxial or oriented ferroelectric thin film is further formed on the metallic thin film. The semiconductor single crystal substrate may be made of Si or GaAs, the buffer thin film may be made of MgO or MgAl.sub.2 O.sub.4, the metallic thin film may be made of Pd, Pt, Al, Au, or Ag, and the ferroelectric thin film has an ABO.sub.3 perovskite crystal structure.
Claims11
An oriented ferroelectric thin film element, comprising:
- a semiconductor single crystal substrate;
- an epitaxial oxide buffer thin film formed on said semiconductor single crystal substrate;
- an epitaxial metallic thin film formed on said oxide buffer thin film;
- and
- an epitaxial ferroelectric thin film formed on said metallic thin film.
Dependencies are inferred from the claim text.