US 5,773,334 A · Method of manufacturing a semiconductor device

Abstract

A semiconductor device is manufactured by a process comprising the steps of forming a cover film on a surface of a semiconductor substrate such that the cover film exposes a portion of the surface, covers a remaining portion thereof and has an edge along a boundary between the exposed portion and the covered portion, forming a first conductor film in a range from the cover film formed in the cover film forming step through the edge to the exposed surface portion of the semiconductor substrate, removing the first conductor film formed in the first conductor film forming step other than a portion formed along the edge such that the first conductor film is left along the edge, forming an insulating film on the opposite sides of the first conductor film left along the edge in the removing step such that a top edge of the left first conductor film is exposed, and forming a second conductor film on the surface of the insulating film formed in the insulating film forming step along the exposed top edge of the first conductor film. In this method, the gate electrode or the base electrode is formed by a side wall process. It is thus possible to reduce the electrode length/width and improve the response of the element.

Claims15

Dependent claims

A method of manufacturing a semiconductor device comprising the steps of:

forming a cover film on a surface of a semiconductor substrate such that the cover film exposes a portion of the surface, covers a remaining portion thereof and has an edge along a boundary between the exposed portion and the covered portion;
forming a first conductor film on the cover film formed in the cover film forming step, on the edge, and on the exposed surface portion of the semiconductor substrate;
removing the first conductor film formed in the first conductor film forming step other than a portion formed along the edge such that the first conductor film is left along the edge;
removing said cover film;
forming an insulating film on the opposite sides of the first conductor film left along the edge in the step of removing the first conductor film such that a top edge of said portion of the first conductor film along the edge is exposed;
and
forming a second conductor film on the surface of the insulating film formed in the insulating film forming step along the exposed top edge of the first conductor film.

4 more elements

A method of manufacturing a semiconductor device comprising the steps of:

forming, on a surface of a semiconductor substrate with an emitter layer, a base layer and a collector layer laminated from a surface side, a cover film such that the cover film exposes a portion of the surface, covers a remaining portion thereof and has an edge along a boundary between the exposed portion and the covered remaining portion of the surface;
removing a part of the emitter layer with the cover film used as a mask;
forming a first conductor film on the surface and the edge of the cover film, the side surface of the remaining emitter layer and a surface of the base layer exposed with removal of the emitter layer;
removing the first conductor film formed in the first conductor film forming step except for a portion of formed along the edge of the cover film and the side surface of the emitter layer and also removing a part of the base layer to expose the collector layer;
removing said cover film:
forming an insulating film on the opposite sides of the first conductor film left in the step of removing the first conductor film such that a top edge of said portion of the first conductor film along the edge is exposed;
and
forming a second conductor film on the surface of the insulating film formed in the insulating film forming step along said top edge.

5 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor device

Life of this patent

Method of manufacturing a semiconductor device

Life of this patent

Abstract

Claims15