Baseband V-I probe
AssigneeENI Technologies, Inc.
InventorsKevin S. Gerrish, Daniel F. Vona, Jr.
Life of this patent
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AssigneeENI Technologies, Inc.
InventorsKevin S. Gerrish, Daniel F. Vona, Jr.
Estimating the term…
An RF probe for a plasma chamber picks up current and voltage samples of the RF power applied to an RF plasma chamber, and the RF voltage and current waveforms are supplied to respective mixers. A local oscillator supplies both mixers with a local oscillator signal at the RF frequency plus or minus about 15 KHz, so that the mixers provide respective voltage and current baseband signals that are frequency shifted down to the audio range. The phase relation of the applied current and voltage is preserved in the baseband signals. These baseband signals are then applied to a stereo, two-channel A/D converter, which provides a serial digital signal to a digital signal processor or DSP. A local oscillator interface brings a feedback signal from the DSP to the local oscillator. The DSP can be suitably programmed to obtain complex Fast Fourier Transforms of the voltage and current baseband samples. The frequency-domain spectra are analyzed to obtain, with great accuracy, magnitude of voltage and current and phase angle. Other parameters are derived from these three.
A plasma arrangement in which an RF power generator supplies an RF electrical wave in an RF frequency range to a power input of a plasma chamber within which said RF electrical wave produces a plasma, and in which a plasma probe picks up an RF voltage waveform of said electrical wave and an RF current waveform of said electrical wave;
A method of deriving amplitude and relative phase information for current and voltage of an RF power wave that is applied at a radio frequency (RF) to a power input of a plasma chamber within which said RF power wave produces a plasma, and in which a plasma probe picks up an RF voltage waveform and an RF current waveform of said power wave;
Dependencies are inferred from the claim text.