Packaging of high power semiconductor lasers
AssigneeCorning Incorporated
InventorsDouglas W. Hall, Paul A. Jakobson, Julia Alyson Sharps, Roger F. Bartholomew
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Abstract
A package for a high power semiconductor laser comprising a hermetically sealed container filled with a dry gaseous medium containing oxygen. The presence of oxygen in the laser atmosphere is counter to standard practice in the art which teaches the use of an atmosphere of a dry inert gas. The package also includes a getter for organic impurities, e.g., a getter composed of a porous silica or a zeolite. The hydrogen content of the materials used to form the package are reduced by baking at an elevated temperature for an extended period of time, e.g., at 150.degree. C. for 200 hours.
Claims39
A method for packaging a high power GaAs substrate semiconductor laser in a container, said laser having a facet structure and said method comprising:
- (a) fixedly positioning said laser in said container;
- (b) introducing into said container a getter for adsorbing or absorbing organic impurities;
- (c) introducing into said container a gaseous medium comprising an oxygen content of at least 100 parts per million;
- and
- (d) hermetically sealing said container containing said introduced gaseous medium.
A method for packaging a high power GaAs substrate semiconductor laser in a container, said container comprising a material which can contain adsorbed or absorbed hydrogen, said laser having a facet structure, and said method comprising:
- (a) reducing the hydrogen content of said material by baking the material at an elevated temperature;
- (b) using the material of step (a) in the formation of the container;
- (c) fixedly positioning the laser in the container;
- (d) introducing into said container a gaseous medium comprising an oxygen content of at least 100 parts per million;
- and
- (e) hermetically sealing the container containing said introduced gaseous medium.
A method for packaging a high power InGaAs semiconductor laser in a container, said method comprising:
- (a) fixedly positioning said high power InGaAs semiconductor laser in said container;
- (b) introducing into said container a gaseous medium comprising an oxygen content of at least 100 parts per million;
- and
- (c) hermetically sealing said container containing said introduced gaseous medium.
A method for packaging a high power InGaAs semiconductor laser within a hermetically sealed container, said method comprising the step of packaging said laser within a hermetically sealed container, said method further comprising the step of introducing a gaseous medium comprising an oxygen content of at least 100 parts per million.
Dependencies are inferred from the claim text.